Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include Ga. A concentration ratio A (A=?Ga/?Ga) of the main phase grains is 1.20 or more, where ?Ga and ?Ga are respectively a highest concentration of Ga and a lowest concentration of Ga in one main phase grain.

Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include C. A concentration ratio A1 (A1=?C/?C) of the main phase grains is 1.50 or more, where ?C and ?C are respectively a highest concentration of C and a lowest concentration of C in one main phase grain.

Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include B. A concentration ratio A (A=?B/?B) of the main phase grains is 1.05 or more, where ?B and ?B are respectively a highest concentration of B and a lowest concentration of B in one main phase grain.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the main phases and the crystal boundary phases among the R2T14B crystal grains. The microstructure of the sintered body is controlled by including crystal boundary phases containing at least R, T and M in the crystal boundary phases, wherein the relative atomic ratios of R, T and M are as follows, i.e., 25 to 35% for R, 60 to 70% for T and 2 to 10% for M.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the major phases and the crystal boundary phases among the R2T14B crystal grains. The microstructure of the sintered body is controlled by including crystal boundary phases containing at least R, T and M in the crystal boundary phases, wherein the relative atomic ratios of R, T and M are as follows, i.e., 60 to 80% for R, 15 to 35% for T and 1 to 20% for M.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the main phases and the crystal boundary phases among R2T14B crystal grains. The microstructure of the sintered body is controlled by at least containing the first crystal boundary phases and the second crystal boundary phases, wherein the first crystal boundary phases contain at least R-T-M in the ranges of 20 to 40 atomic % for R, 60 to 75 atomic % for T and 1 to 10 atomic % for M, and the second crystal boundary phases contains at least R-T-M in the ranges of 50 to 70 atomic % for R, 10 to 30 atomic % for T and 1 to 20 atomic % for M.

Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include B. A concentration ratio A (A=?B/?B) of the main phase grains is 1.05 or more, where ?B and ?B are respectively a highest concentration of B and a lowest concentration of B in one main phase grain.

Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include C. A concentration ratio A1 (A1=?C/?C) of the main phase grains is 1.50 or more, where ?C and ?C are respectively a highest concentration of C and a lowest concentration of C in one main phase grain.

Abstract: A rare earth magnet includes main phase grains having an R2T14B type crystal structure. The main phase grains include Ga. A concentration ratio A (A=?Ga/?Ga) of the main phase grains is 1.20 or more, where ?Ga and ?Ga are respectively a highest concentration of Ga and a lowest concentration of Ga in one main phase grain.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the main phases and the crystal boundary phases among the R2T14B crystal grains. The microstructure of the sintered body is controlled by including crystal boundary phases containing at least R, T and M in the crystal boundary phases, wherein the relative atomic ratios of R, T and M are as follows, i.e., 25 to 35% for R, 60 to 70% for T and 2 to 10% for M.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the main phases and the crystal boundary phases among R2T14B crystal grains. The microstructure of the sintered body is controlled by at least containing the first crystal boundary phases and the second crystal boundary phases, wherein the first crystal boundary phases contain at least R-T-M in the ranges of 20 to 40 atomic % for R, 60 to 75 atomic % for T and 1 to 10 atomic % for M, and the second crystal boundary phases contains at least R-T-M in the ranges of 50 to 70 atomic % for R, 10 to 30 atomic % for T and 1 to 20 atomic % for M.

Abstract: The present invention provides a rare earth based magnet in which the demagnetization rate at a high temperature can be inhibited even if the amount of heavy rare earth element(s) such as Dy and Tb is evidently decreased compared to the past or no such heavy rare earth element is used. The rare earth based magnet of the present invention is a sintered magnet which comprises R2T14B crystal grains as the major phases and the crystal boundary phases among the R2T14B crystal grains. The microstructure of the sintered body is controlled by including crystal boundary phases containing at least R, T and M in the crystal boundary phases, wherein the relative atomic ratios of R, T and M are as follows, i.e., 60 to 80% for R, 15 to 35% for T and 1 to 20% for M.

Abstract: A magnetic pole of a magnetic head includes a narrow and a wide portion, and is formed of a plating film. An electrode film forms the plating film, and is provided only under at least a part of the wide portion. A manufacturing method for the magnetic head includes: forming a plating-film-accommodating layer with an accommodating groove; forming the electrode film in part of the accommodating groove; and forming the plating film in the accommodating groove by plating using the electrode film. The accommodating groove includes a narrow and a wide groove portion for accommodating the narrow and wide portions, respectively. The electrode film is provided only in at least a part of the wide groove portion. In the step of forming the plating film, the plating film grows from the surface of the electrode film, and the narrow groove portion is filled with a part of the plating film.

Abstract: A magnetic pole of a magnetic head includes a narrow and a wide portion, and is formed of a plating film. An electrode film forms the plating film, and is provided only under at least a part of the wide portion. A manufacturing method for the magnetic head includes: forming a plating-film-accommodating layer with an accommodating groove; forming the electrode film in part of the accommodating groove; and forming the plating film in the accommodating groove by plating using the electrode film. The accommodating groove includes a narrow and a wide groove portion for accommodating the narrow and wide portions, respectively. The electrode film is provided in at least a part of the wide groove portion. In the step of forming the plating film, the plating film grows from the surface of the electrode film, and the narrow groove portion is filled with a part of the plating film.

Abstract: The method of measuring crystallographic orientations, crystal systems or the like of the surface of a specimen has steps of: irradiating the specimen with an ion beam; measuring the secondary electrons generated by the irradiation of the ion beam; repeating the irradiation of the ion beam and the measurement of the secondary electrons with each variation in an angle of incidence of the ion beam with respect to the specimen; and determining the crystalline state based on the variation in the amount of the secondary electrons corresponding to the variation of the angle of incidence.

Abstract: The method of measuring crystallographic orientations, crystal systems or the like of the surface of a specimen has steps of: irradiating the specimen with an ion beam; measuring tho secondary electrons generated by the irradiation of the ion beam; repeating the irradiation of the ion beam and the measurement of the secondary electrons with each variation in an angle of incidence of the ion beam with respect to the specimen; and determining the crystalline state based on the variation in the amount of the secondary electrons corresponding to the variation of the angle of incidence.