Patents by Inventor Wakako Shiramura

Wakako Shiramura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6735056
    Abstract: An electron device includes a first layer formed of a metal or metal alloy and a second layer adjoining the first layer and formed of a metal or metal alloy different from that of the first layer. In the region adjacent the first layer and the second layer, there is provided a concentration gradient layer formed of a mixture containing a metal or metal alloy contained in the first layer and a metal or metal alloy contained in the second layer. A covering film covers end faces of the first and second layers. With this arrangement, when a cleaning as by etching is carried out on the end faces of the multilayered film structure of the electron device, the end faces are etched in relatively smoothly connected surfaces because of the etched end face of the concentration gradient layer in a gentle slope, so that coverage of the covering film on the end faces of the multilayered film structure can be improved to increase the adherence strength of the covering film.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: May 11, 2004
    Assignee: TDK Corporation
    Inventors: Katsuaki Yanagiuchi, Wakako Shiramura
  • Publication number: 20020159202
    Abstract: An electron device includes a first layer formed of a metal or metal alloy and a second layer adjoining the first layer and formed of a metal or metal alloy different from that of the first layer. In the region adjacent the first layer and the second layer, there is provided a concentration gradient layer formed of a mixture containing a metal or metal alloy contained in the first layer and a metal or metal alloy contained in the second layer, A covering film covers end faces of the first and second layers. With this arrangement, when a cleaning as by etching is carried out on the end faces of the multilayered film structure of the electron device, the end faces are etched in relatively smoothly connected surfaces because of the etched end face of the concentration gradient layer in a gentle slope, so that coverage of the covering film on the end faces of the multilayered film structure can be improved to increase the adherence strength of the covering film.
    Type: Application
    Filed: April 16, 2002
    Publication date: October 31, 2002
    Applicant: TDK CORPORATION
    Inventors: Katsuaki Yanagiuchi, Wakako Shiramura