Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

Abstract: In one embodiment, a method for manufacturing a semiconductor light emitting device characterized by bonding a first stacked body to a second stacked body is disclosed. The first stacked body includes a first substrate, a semiconductor layer, and a first metal layer. The second stacked body includes a second substrate and a second metal layer. The method can include overlaying the first metal layer and the second metal layer by shifting a cleavage direction of the first stacked body from a cleavage direction of the second stacked body. The method can include bonding the first stacked body and the second stacked body by increasing a temperature in a state of pressing the first stacked body and the second stacked body into contact.

Abstract: A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.

Abstract: A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.

Abstract: A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.

Abstract: A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.