Patents by Inventor Walaa SAHYOUN

Walaa SAHYOUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Impedance adaptation in a THz detector
    Patent number: 9614116
    Abstract: At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: April 4, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Philippe Le Bars, Walaa Sahyoun, Wojciech Knap, Nina Diakonova, Dominique Coquillat
  • Impedance adaptation in a THz detector
    Publication number: 20150364508
    Abstract: At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.
    Type: Application
    Filed: June 10, 2015
    Publication date: December 17, 2015
    Inventors: Philippe LE BARS, Walaa SAHYOUN, Wojciech KNAP, Nina DIAKONOVA, Dominique COQUILLAT