Abstract: A method for reducing optical loss in opto-electronic devices includes passivating P-type dopant impurities formed within various cladding and contact layer films. The passivating species is atomic hydrogen produced by a hydrogen containing plasma. The atomic hydrogen complexes with P-type dopant impurities to form electrically neutral pairs which are void of free carriers. Absorption, and loss, of the optical wave is therefore suppressed as it propagates through the P-doped layers because of the reduced free carrier concentration in the P-doped layers.

Abstract: Optical sources, such as electro-absorption modulator isolated laser modules (EMILMs), for fiber optical communication systems are selected based on noise measures made outside—and preferably substantially outside—of the communication system's operational bandwidth. In one embodiment, EMILM devices are selected for communication systems having path lengths of 640 km or more based on both the chirp of the devices and the relative intensity noise (RIN) of the devices at the relaxation oscillation frequency Fr. Devices having both low chirp and low RIN at Fr are more likely to meet bit error rate requirements than are devices selected solely for low chirp.

Abstract: The present invention is an Electro-Absorption-Isolated-Laser-Module (EMILM) especially adapted for use in optical communication systems, and more particularly a wavelength division multiplexed (WDM) system. The EMILM device is packaged in an industry standard housing which consists of a metal package with dielectric feedthrus which couple internal areas of the device to external pins. The device includes passive reactive elements coupled between the electrical feedthrus and the metal package which help to minimize distortion on the drive signal of the EMILM and dampen oscillations which are induced or already present.