Abstract: A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current terminal for a load current output. At least one outer load current terminal and at least one inner load current terminal per load current direction include a load current input and a load current output. At least one contacting device for common electrical contacting all of the load current terminals of the same load current direction includes a load current input and a load current output. The contacting device includes a plurality of terminal tongues which are respectively fastened on an associated load current terminal. The geometry and/or profile of the terminal tongue of an outer load current terminal differs from the geometry and/or profile of the terminal tongue of an inner load current terminal of the same contacting device.

Abstract: A circuit arrangement includes at least two semiconductor chip having first and second load terminals that are each connected to one another, a first load current collecting conductor track, and also an external terminal electrically conductively connected thereto. For each of the semiconductor chips there is at least one electrical connection conductor electrically conductively connected to the first load terminal of the relevant semiconductor chip and also to the first load current collecting conductor track. The total inductance of all the connection conductors with which the first load terminal of the second of the semiconductor chips is connected to the first load current collecting conductor track has at least twice the inductance of that section of the first load current collecting conductor track which is formed between the second connection location of the first of the semiconductor chips and the second connection location of the second of the semiconductor chips.

Abstract: A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current terminal for a load current output. At least one outer load current terminal and at least one inner load current terminal per load current direction include a load current input and a load current output. At least one contacting device for common electrical contacting all of the load current terminals of the same load current direction includes a load current input and a load current output. The contacting device includes a plurality of terminal tongues which are respectively fastened on an associated load current terminal.

Abstract: A circuit arrangement includes at least two semiconductor chip having first and second load terminals that are each connected to one another, a first load current collecting conductor track, and also an external terminal electrically conductively connected thereto. For each of the semiconductor chips there is at least one electrical connection conductor electrically conductively connected to the first load terminal of the relevant semiconductor chip and also to the first load current collecting conductor track. The total inductance of all the connection conductors with which the first load terminal of the second of the semiconductor chips is connected to the first load current collecting conductor track has at least twice the inductance of that section of the first load current collecting conductor track which is formed between the second connection location of the first of the semiconductor chips and the second connection location of the second of the semiconductor chips.

Abstract: A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.

Abstract: A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.