Abstract: Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.

Abstract: Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.

Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.

Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.

Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.