Abstract: High-quality noN-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiOx HTL. Better performance in NiOx based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiOx semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

Abstract: High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiOx HTL. Better performance in NiOx based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiOx semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

Abstract: High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiOx HTL. Better performance in NiOx based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiOx semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

Abstract: A NiOx:electron acceptor nanocomposite based film is prepared by synthesizing NiOx nanoparticles (NPs) by a solvothermal synthesis treatment; dispersing the NiOx NPs and an electron acceptor into an alcohol solvent to form a NiOx:electron acceptor solution; conducting an ultrasonic treatment on the NiOx:electron acceptor solution; and solution-processing the NiOx:electron acceptor solution onto a substrate to form a NiOx:electron acceptor nanocomposite based film on the substrate. The film may be used to form an optoelectronic device such as solar cell, a light emitting diode, a laser, or a photodetector.

Abstract: Methods for the fabrication of transparent conductive metal nanowire networks are provided, as well as metal nanowire networks fabricated by such methods. A metal nanowire network can be immersed in a solution and illuminated for a duration of time. Selective nucleation and growth of metal nanoparticles can be induced at the junctions between metal nanowires.

Abstract: High-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiOx HTL. Better performance in NiOx based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiOx semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

Abstract: Methods for the fabrication of transparent conductive metal nanowire networks are provided, as well as metal nanowire networks fabricated by such methods. A metal nanowire network can be immersed in a solution and illuminated for a duration of time. Selective nucleation and growth of metal nanoparticles can be induced at the junctions between metal nanowires.