Abstract: A charge-coupled device (CCD) for amplifying and accumulating charge comprises a first CCD line, a plurality of time-independent CCD charge amplifiers each having an input gate connected to a surface potential tap on a respective one of the charge storage regions of the first CCD line, and a second CCD line for accumulating the charge which has been amplified by the charge amplifiers. The device permits the coherent accumulation of the charge in a time-independent manner. Arithmetic, logic, and complex signal processing functions may be conducted by suitable configurations of the charge amplifiers.

Abstract: A uniphase charge transfer device comprises a plurality of electrode pairs disposed over a layer of gate oxide which overlies a semiconductor substrate. Within the substrate are a plurality of first conduction regions which are doped to a conductivity type opposite to that of the substrate. The first conduction regions underlie the separations between electrode pairs, and each one is electrically connected to one member of each electrode pair. A plurality of second conduction regions in the substrate are of the same conductivity type as the substrate but are of a substantially greater density of impurity atoms, and each of the second conduction regions underlies a portion of the other member of each electrode pair. A single clock line is connected to that member of each electrode pair which overlies the second conduction region. By alternatingly applying a predetermined voltage to the single clock line, charge packets representing information are moved unidirectionally through the device.

Abstract: A time-independent CCD charge amplifier comprises first and second CCD lines each having a plurality of electrode pairs disposed over a layer of silicon dioxide overlying a semiconductor substrate. Two clocks which are in a predetermined phase relationship with respect to one another are connected to alternate electrode pairs. The second CCD line further comprises a clocked-source charge injector, the input gate of which is electrically coupled to the signal source, which in a preferred embodiment comprises a surface potential tap in the first CCD line. According to a preferred embodiment, charge is non-destructively sampled from the first CCD line and is amplified by a predetermined factor in the second CCD line.

Abstract: A method of fabricating conductivity connected charge-coupled devices (C4D's) is disclosed wherein N+ barriers are ion-implanted in an N-type substrate and wherein P++ conductivity connecting regions are formed by diffusion of impurity atoms into the substrate. The process is compatible with the known silicon gate process, enabling semiconductor devices of other types and with different thresholds to be formed on the substrate at the same time the C4D's are fabricated.