Abstract: Compactor (100) suitable for compacting and wrapping bulk material and suitable for transportation on public roads. The compactor comprises a bunker (200) for reception of the bulk material to be compacted. The bunker (200) exhibits a front end adjacent to a baler unit (300), and a rear end facing the supply of bulk material. The compactor (100) exhibits a longitudinal axis (L) coinciding with the transport direction of the compactor (100) on a road. The bunker (200) comprises two substantially mirror-symmetric foldable first (201A) and second (201B) bunker section mounted to a frame (207) in a pivotal manner in a vertical direction about a horizontal axis extending perpendicularly to the longitudinal axis (L). An end plate (205A; 205B) is mounted pivotal at the rear of the bunker (200) serving as anchoring means and bulk collector means.

Abstract: Compactor (100) suitable for compacting and wrapping bulk material and suitable for transportation on public roads. The compactor comprises a bunker (200) for reception of the bulk material to be compacted. The bunker (200) exhibits a front end adjacent to a baler unit (300), and a rear end facing the supply of bulk material. The compactor (100) exhibits a longitudinal axis (L) coinciding with the transport direction of the compactor (100) on a road. The bunker (200) comprises two substantially mirror-symmetric foldable first (201A) and second (201B) bunker section mounted to a frame (207) in a pivotal manner in a vertical direction about a horizontal axis extending perpendicularly to the longitudinal axis (L). An end plate (205A; 205B) is mounted pivotal at the rear of the bunker (200) serving as anchoring means and bulk collector means.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

Abstract: Metal seeds for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin films of material together. In particular, described herein are methods of forming AlCuNi SMAs by first producing high-quality seeds (ingots) of copper, aluminum, and nickel to produce for pulling single crystal shape memory alloys, in particular superelastic or hyperelastic alloys. The method is applicable to a wide range of alloys in which one or more of the components are reactive. The method is an improvement upon traditional methods such as mixing and melting pellets. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel).

Abstract: Metal seeds for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin films of material together. In particular, described herein are methods of forming AlCuNi SMAs by first producing high-quality seeds (ingots) of copper, aluminum, and nickel to produce for pulling single crystal shape memory alloys, in particular superelastic or hyperelastic alloys. The method is applicable to a wide range of alloys in which one or more of the components are reactive. The method is an improvement upon traditional methods such as mixing and melting pellets. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel).

Abstract: In order, during the processing of a thread layer, which is tensioned in tensioning means and exhibits threads running parallel to one another, to be able to vary the sequence of the processing of the threads, a storage device is proposed for the temporary deposition of at least one of the threads which can be separated from a thread layer. The storage device is provided with at least one storage means, which exhibits at least one retaining means for the retention of one or more threads under tension, whereby the minimum of one retaining means is arranged outside the plane of the thread layer. In addition, the storage device exhibits at least one transfer means, with which the thread can be transferred to the storage means.

Abstract: In order, during the processing of a thread layer, which is tensioned in tensioning means and exhibits threads running parallel to one another, to be able to vary the sequence of the processing of the threads, a storage device is proposed for the temporary deposition of at least one of the threads which can be separated from a thread layer. The storage device is provided with at least one storage means, which exhibits at least one retaining means for the retention of one or more threads under tension, whereby the minimum of one retaining means is arranged outside the plane of the thread layer. In addition, the storage device exhibits at least one transfer means, with which the thread can be transferred to the storage means.

Abstract: A semiconductor scanning resistance probe which has a support structure formed on a top surface of a substrate to form a cantilever. The support structure has a plurality of openings which extend through the support structure from a connector end to a cone end. An outer surface of the support structure at one side of each opening is cone-shaped so that an apex of the cone forms the cone end. A probe tip is formed in each probe tip opening and along the surface of the support structure. The probe tips are placed on individual semiconductor devices to extract impurity profiles.