Patents by Inventor Walter A. Hicinbothem, Jr.

Walter A. Hicinbothem, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improving adhesion of metal film on a dielectric surface
    Patent number: 4404235
    Abstract: The surface of a dielectric is exposed to gaseous WF.sub.6 and H.sub.2 at a temperature between approximately 500.degree. C. and 650.degree. C. This initiates the formation of tungsten islands on the dielectric surface without damaging the surface. An appropriate metallization layer is then deposited from the vapor phase onto the tungsten island covered dielectric surface.
    Type: Grant
    Filed: February 23, 1981
    Date of Patent: September 13, 1983
    Assignee: RCA Corporation
    Inventors: Ming L. Tarng, Walter A. Hicinbothem, Jr.
  • Method of depositing a refractory metal on a semiconductor substrate
    Patent number: 4349408
    Abstract: A method for depositing a refractory on a semiconductor substrate passivated with silicon dioxide and/or oxygen doped polycrystalline silicon is disclosed. The usual undercutting of the oxygen doped polycrystalline silicon or of the silicon substrate at the edge where it meets the oxide is prevented by depositing a layer of phosphorus doped polycrystalline silicon over the passivation material before the metal is deposited.
    Type: Grant
    Filed: March 26, 1981
    Date of Patent: September 14, 1982
    Assignee: RCA Corporation
    Inventors: Ming L. Tarng, Walter A. Hicinbothem, Jr.