Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R1F and a second larger radius R2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d1 and d2. A value d assumes all possible values of d1 and d2. In particular, 0.8≦(R2F−R1F)/d≦3.0 and preferably 1.0≦(R2F−R1F)/d≦2.2 The arrangement defines a sputtering geometry with the process space with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R.sub.1F and a second larger radius R.sub.2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d.sub.1 and d.sub.2. A value d assumes all possible values of d1 and d2. In particular,0.8.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.3.0and preferably1.0.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.2.2.The arrangement defines a sputtering geometry with the process space essentially at very short target-to-substrate distance and with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion, whereby the substrate damage is reduced and high process economies are achieved.