Patents by Inventor Walter B. Glenn

Walter B. Glenn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-station deposition apparatus and method
    Patent number: 7923069
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: April 12, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • MULTI-STATION DEPOSITION APPARATUS AND METHOD
    Publication number: 20100316800
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Application
    Filed: August 20, 2010
    Publication date: December 16, 2010
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • Multi-station deposition apparatus and method
    Patent number: 7794789
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: September 14, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • MULTI-STATION DEPOSITION APPARATUS AND METHOD
    Publication number: 20090214786
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Application
    Filed: May 5, 2009
    Publication date: August 27, 2009
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • Multi-station deposition apparatus and method
    Patent number: 7547465
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Grant
    Filed: August 5, 2005
    Date of Patent: June 16, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • Multi-station deposition apparatus and method
    Patent number: 6932871
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: August 23, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • Multi-station deposition apparatus and method
    Publication number: 20030194493
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Application
    Filed: April 16, 2002
    Publication date: October 16, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn