Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support.

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

Abstract: The present invention is directed to depositing multicomponent films with a cyclical sequential deposition (CSD) process. The CSD process deposits a film of a material on a surface by repeating a cycle of process steps comprising sequentially exposing the surface to at least two reactants. The reactants contain precursors that supply the elements that form the multicomponent material. The reactant components that are not precursors may react with the at least one precursor to form a film of the material, or may react with the surface onto which the film of material is to be deposited to prepare the surface for deposition. Each CSD cycle produces a discrete layer of a multicomponent material. The CSD cycle is repeated, depositing one layer each cycle, until the film of multicomponent material reaches the desired thickness.

Abstract: Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support.

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.