Patents by Inventor Walter Dean Mieher
Walter Dean Mieher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10401740Abstract: A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.Type: GrantFiled: May 13, 2016Date of Patent: September 3, 2019Assignee: KLA-Tencor CorporationInventor: Walter Dean Mieher
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Patent number: 10352876Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.Type: GrantFiled: May 5, 2015Date of Patent: July 16, 2019Assignee: KLA—Tencor CorporationInventors: Andrei V. Shchegrov, Stilian Ivanov Pandev, Jonathan M. Madsen, Alexander Kuznetsov, Walter Dean Mieher
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Publication number: 20160334716Abstract: A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.Type: ApplicationFiled: May 13, 2016Publication date: November 17, 2016Inventor: Walter Dean Mieher
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Publication number: 20150323316Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.Type: ApplicationFiled: May 5, 2015Publication date: November 12, 2015Inventors: Andrei V. Shchegrov, Stilian Ivanov Pandev, Jonathan M. Madsen, Alexander Kuznetsov, Walter Dean Mieher
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Patent number: 8452718Abstract: Automated determination of a number of profiles for a training data set to be used in training a machine learning system for generating target function information from modeled profile parameters. In one embodiment, a first principal component analysis (PCA) is performed on a training data set, and a second PCA is performed on a combined data set which includes the training data set and a test data set. A test data set estimate is generated based on the first PCA transform and the second PCA matrix. The size of error between the test data set and the test data set estimate is used to determine whether a number of profiles associated with the training data set is sufficiently large for training a machine learning system to generate a library of spectral information.Type: GrantFiled: June 10, 2010Date of Patent: May 28, 2013Assignees: Tokyo Electron Limited, KLA-Tencor CorporationInventors: Wen Jin, Vi Vuong, Walter Dean Mieher
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Patent number: 8330281Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: GrantFiled: July 30, 2007Date of Patent: December 11, 2012Assignee: KLA-Tencor Technologies CorporationInventors: Mark Ghinovker, Michael Adel, Walter Dean Mieher, Ady Levy, Dan Wack
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Publication number: 20110307424Abstract: Automated determination of a number of profiles for a training data set to be used in training a machine learning system for generating target function information from modeled profile parameters. In one embodiment, a first principal component analysis (PCA) is performed on a training data set, and a second PCA is performed on a combined data set which includes the training data set and a test data set. A test data set estimate is generated based on the first PCA transform and the second PCA matrix. The size of error between the test data set and the test data set estimate is used to determine whether a number of profiles associated with the training data set is sufficiently large for training a machine learning system to generate a library of spectral information.Type: ApplicationFiled: June 10, 2010Publication date: December 15, 2011Inventors: Wen Jin, Vi Vuong, Walter Dean Mieher
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Patent number: 8040511Abstract: Methods and apparatus for measuring an optical azimuth angle ?O of a substrate relative to a plane of detection in scatterometry tools are disclosed. A grating target on a stage of a scatterometry tool may be illuminated and positions of the resulting diffraction orders may be observed. The optical azimuth angle may be determined from the positions of the diffraction orders. Alternatively, polarization-dependent signals of radiation scattered from a line grating may be measured for equal and opposite polarization angles +A and ?A. A combination signal may be computed from the polarization-dependent signals obtained at +A and ?A and a property of the combination signal may be calculated for several mechanical Azimuth angles ?M. A relationship between the optical azimuth angle ?O and the mechanical azimuth angle ?M may be determined from a behavior of the property as a function of mechanical azimuth angle ?M.Type: GrantFiled: January 21, 2009Date of Patent: October 18, 2011Assignee: KLA-Tencor CorporationInventors: Shankar Krishnan, Haixing Zhou, Haiming Wang, David Lidsky, Walter Dean Mieher
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Publication number: 20090291513Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: ApplicationFiled: July 31, 2009Publication date: November 26, 2009Applicant: KLA-TENCOR CORPORATIONInventors: Mark Ghinovker, Michael Adel, Walter Dean Mieher, Ady Levy, Dan Wack
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Patent number: 7317824Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: GrantFiled: March 30, 2006Date of Patent: January 8, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Mark Ghinovker, Michael Adel, Walter Dean Mieher, Ady Levy, Dan Wack
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Patent number: 7274814Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: GrantFiled: May 12, 2006Date of Patent: September 25, 2007Assignee: KLA-Tencor CorporationInventors: Mark Ghinovker, Michael Adel, Walter Dean Mieher, Ady Levy, Dan Wack
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Patent number: 7181057Abstract: An overlay mark for determining the relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The overlay mark includes a plurality of working zones, which are used to calculate alignment between a first and a second layer of the substrate or between a first and a second pattern on a single layer of the substrate. Each of the working zones is positioned within the perimeter of the mark. Each of the working zones represents a different area of the mark. The working zones are configured to substantially fill the perimeter of the mark such that the combined area of the working zones is substantially equal to the total area of the mark.Type: GrantFiled: June 26, 2002Date of Patent: February 20, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Michael Adel, Mark Ghinovker, Walter Dean Mieher, Ady Levy, Dan Wack
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Patent number: 7175945Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system.Type: GrantFiled: March 16, 2005Date of Patent: February 13, 2007Assignee: KLA-Tencor CorporationInventors: Walter Dean Mieher, Daniel Wack, Ady Levy
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Patent number: 7177457Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate via scanning is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: GrantFiled: June 26, 2002Date of Patent: February 13, 2007Assignee: KLA-Tencor CorporationInventors: Michael Adel, Mark Ghinovker, Walter Dean Mieher
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Patent number: 7068833Abstract: An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.Type: GrantFiled: June 27, 2001Date of Patent: June 27, 2006Assignee: KLA-Tencor CorporationInventors: Mark Ghinovker, Michael Adel, Walter Dean Mieher, Ady Levy, Dan Wack
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Patent number: 6985618Abstract: A method of designing an overlay mark, which is used to determine the relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate, is disclosed. The method includes optimizing the geometry of a first element of the mark according to a first scale. The method further includes optimizing the geometry of a second element of the mark according to a second scale. The method additionally includes optimizing the geometry of a third element of the mark according to a third scale.Type: GrantFiled: June 26, 2002Date of Patent: January 10, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Michael Adel, Mark Ghinovker, Walter Dean Mieher
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Patent number: 6884552Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system.Type: GrantFiled: November 7, 2002Date of Patent: April 26, 2005Assignee: KLA-Tencor Technologies CorporationInventors: Walter Dean Mieher, Daniel Wack, Ady Levy
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Publication number: 20030095267Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system.Type: ApplicationFiled: November 7, 2002Publication date: May 22, 2003Inventors: Walter Dean Mieher, Daniel Wack, Ady Levy
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Publication number: 20030021467Abstract: An overlay mark for determining the relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The overlay mark includes a plurality of working zones, which are used to calculate alignment between a first and a second layer of the substrate or between a first and a second pattern on a single layer of the substrate. Each of the working zones is positioned within the perimeter of the mark. Each of the working zones represents a different area of the mark. The working zones are configured to substantially fill the perimeter of the mark such that the combined area of the working zones is substantially equal to the total area of the mark.Type: ApplicationFiled: June 26, 2002Publication date: January 30, 2003Inventors: Michael Adel, Mark Ghinovker, Walter Dean Mieher
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Publication number: 20030021465Abstract: relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate, is disclosed. The method includes optimizing the geometry of a first element of the mark according to a first scale. The method further includes optimizing the geometry of a second element of the mark according to a second scale. The method additionally includes optimizing the geometry of a third element of the mark according to a third scale.Type: ApplicationFiled: June 26, 2002Publication date: January 30, 2003Inventors: Michael Adel, Mark Ghinovker, Walter Dean Mieher