Abstract: A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging the replacement chamber with a purge gas; interrupting the deposition of the epitaxial layer; replacing the chamber with the replacement chamber, after the conditioning, the replacement chamber being sealed and transported in a closed state to the plant or after the conditioning, the replacement chamber is transported to the plant and in this process purge gas is passed through the replacement chamber; and continuing the deposition of the epitaxial layer in the replacement chamber, producing a second number of semiconductor wafers.

Abstract: A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet. Flushing gas is passed along a lower side of a preheating ring and of the susceptor. The supporting shaft is displaced with the time period along a displacement path from a position where a thinner edge of the substrate has its smallest distance from the gas inlet, to where the thinner edge has its largest distance therefrom, and back.

Abstract: A method and an apparatus for depositing an epitaxial layer on a substrate wafer made of semiconductor material. The method comprises the arrangement of the substrate wafer and a susceptor in a deposition device such that the substrate wafer rests on the susceptor and the susceptor is held by arms of a support shaft; monitoring whether a misalignment of the susceptor exists with respect to its position relative to the position of a pre-heating ring surrounding it; monitoring whether a misalignment of the support shaft exists with respect to its position relative to the position of the pre-heating ring; if at least one of the misalignments is present, elimination of the respective misalignment; and the deposition of the epitaxial layer on the substrate wafer.

Abstract: A method for drying wafer substrates immersed into a liquid, and wafer holder for conduction of the method. The method involves holding substrates on a wedge-shaped edge of an elongated wafer holder, the substrates being upright on the wafer holder; transferring the substrates and the wedge-shaped edge of the wafer holder from the liquid to a gas space with a vapor which does not condense on the substrates and which lowers surface tension of liquid residues adhering to the substrates, wherein the removal of liquid residues between the wafer substrates and the wafer holder through a slot in the middle of the wedge-shaped edge of the wafer holder.