Abstract: One aspect of the invention relates to a non-volatile memory cell array and a fabrication method thereof. The non-volatile memory cell array includes first wordlines running in parallel along a first direction as well as second wordlines running in parallel along a second direction. Said first wordlines provide gate electrodes of a first part of non-volatile memory cells arranged along said second direction, whereas said second wordlines provide gate electrodes of a second part of non-volatile memory cells arranged along said first direction.