Abstract: A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as to stabilize the retaining device with respect to deformations and temperature. The gas inlet organ is secured, at a plurality of suspension points, to the retaining device by means of a plurality of hanging elements distributed over the entire horizontal surface of the retaining device. The retaining device has mechanical stabilization elements formed by a retaining frame having vertical walls that are interconnected at vertical connection lines. An actively cooled heat shield is situated between the retaining device and the gas inlet organ.

Abstract: A transport module for loading and unloading a process module of a semiconductor production device includes a housing, which has a chamber that can be evacuated. The chamber has an opening that can be closed in a gas-tight manner by a closure device, which opens out into a first coupling duct associated with the transport module. The first coupling duct is connected with a flange plate using an elastic intermediate element, wherein the flange plate can be seated in a plane parallel, sealing manner on a flange plate of a second coupling duct associated with the process module. After opening the closure device, an evacuated loading and unloading duct to the process module is created. An inner and outer mounting section of the intermediate element is spaced apart from one another in the radial direction, with respect to the axis of the first coupling duct, by a deformation zone.

Abstract: A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as to stabilize the retaining device with respect to deformations and temperature. The gas inlet organ is secured, at a plurality of suspension points, to the retaining device by means of a plurality of hanging elements distributed over the entire horizontal surface of the retaining device. The retaining device has mechanical stabilization elements formed by a retaining frame having vertical walls that are interconnected at vertical connection lines. An actively cooled heat shield is situated between the retaining device and the gas inlet organ.

Abstract: The invention concerns a transport module (2) for purposes of loading and unloading a process module (1) of a semiconductor production device, with a housing (3), which has a chamber (4) that can be evacuated, which has an opening (6) that can be closed in a gas-tight manner by a closure device (5), which opens out into a coupling duct (7) associated with the transport module (2), which coupling duct is connected with a flange plate (9) using an elastic intermediate element (8), wherein the flange plate (9) can be seated in a plane parallel, sealing manner on a flange plate (11) of a coupling duct (10) associated with the process module (1), such that after opening the closure device (5) an evacuated loading and unloading duct to the process module (1) is created, wherein a mounting section of the intermediate element (8) is connected with the wall (12, 12?) of the coupling duct (7).

Abstract: The invention relates to a device for depositing laterally structured layers on a substrate (2) situated on a substrate support (1), using a shadow mask (3) lying flat on the substrate surface (2?) to be coated, the substrate support (1) having first magnetic zones (4) for magnetically attracting second magnetic zones (5) of the shadow mask (3) that are associated with these first magnetic zones (4), wherein, before coating the substrate (2) and when the shadow mask (3) is lying on the substrate (2), the first magnetic zones (4) may be brought into an active position in which the second magnetic zones (5) are drawn toward the substrate surface (2?), and, for placement or removal of the shadow mask (3), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones (5) is reduced.

Abstract: A device for treating a substrate (12) includes a conveying device (13) for loading and unloading substrates or masks (10, 10?, 10?, 10??) into and from a process chamber (1) through loading openings (6, 7). A shielding plate (11), used to shield the substrate (12) or the mask (10) from the influence of heat is moved between a shielding position and a storage position during the substrate treatment and, after the substrate (12) is treated, from the storage position back into the shielding position. In the storage position, the shielding plate (11) is situated inside a storage chamber (2, 3).

Abstract: The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.

Abstract: The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate (5), having a susceptor (2) for accommodating the at least one substrate (5), the susceptor forming the floor of a process chamber (1), having a cover plate (3) which forms the ceiling of the process chamber (1), and having a gas inlet element (4) for introducing process gases, which decompose into the layer-forming components in the process chamber as the result of heat input, and a carrier gas, wherein below the susceptor (2) a multiplicity of heating zones (H1-H8) are situated next to one another, by means of which in particular different heat outputs (Q1, Q2) are introduced into the susceptor (2) in order to heat the susceptor surface facing the process chamber (1) and the gas located inside the process chamber (1), a heat dissipation element (8) which is thermally coupled to the cover plate (3) being provided above the cover plate (3) in order to dissipate the heat transported from th

Abstract: The invention relates to a device for depositing laterally structured layers on a substrate (2) situated on a substrate support (1), using a shadow mask (3) lying flat on the substrate surface (2?) to be coated, the substrate support (1) having first magnetic zones (4) for magnetically attracting second magnetic zones (5) of the shadow mask (3) that are associated with these first magnetic zones (4), wherein, before coating the substrate (2) and when the shadow mask (3) is lying on the substrate (2), the first magnetic zones (4) may be brought into an active position in which the second magnetic zones (5) are drawn toward the substrate surface (2?), and, for placement or removal of the shadow mask (3), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones (5) is reduced.

Abstract: The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.

Abstract: The invention relates to a source arrangement of a VPE deposition device, comprising a container (2) containing a liquid or solid starting material (1) and having a top opening, a feed line (3) for a reactive gas (4) which reacts with the starting material (1) in order to produce a process gas (5) that contains the starting material. The aim of the invention is to temporally stabilize the source reaction. For this purpose, a cover (6) rests directly on the starting material (1) and defines a volume (8) between the cover and the surface (7) of the starting material (1), the reactive gas (4) flowing through said volume and the feed line (3) running into it.

Abstract: The invention relates to a method of controlling the surface temperature of a substrate (9) resting on a substrate holder (2) borne by a substrate holder support (1) on a dynamic gas cushion (8) formed by a gas stream in a process chamber (12) of a CVD reactor, wherein heat is introduced into the substrate (9) at least partly by thermal conduction via the gas cushion. To reduce lateral deviations of the surface temperature of a substrate from a mean, it is proposed that the gas stream forming the gas cushion (8) be formed by two or more gases (17, 18) having different specific thermal conductivities and the composition be varied as a function of a measured substrate temperature.

Abstract: The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors (7) for receiving substrates, comprising a substrate holder (6) that can be rotatably driven and forms the bottom of a process chamber (2), a RF heating system (22) disposed below the susceptor holder (6) and a gas inlet element (4) for introducing process gases into the process chamber. In order to further develop the generic device and to improve the production and advantages of use, it is proposed that the susceptor holder (6) lies in a sliding manner on an essentially IR- and/or RF-permeable supporting plate (14).

Abstract: The invention relates to a CVD reactor which comprises a process chamber, disposed inside a reactor housing and having process chamber walls, a process chamber bottom and a process chamber ceiling spaced apart by a distance from the process chamber bottom. The reactor housing comprises at least one reactor wall which can be slightly elastically deformed when the pressure within the reactor housing changes. Said reactor wall is provided with an especially center opening through which a functional element projects. Said functional element is firmly linked via a first section with a process chamber wall and has a second section that is located outside the reactor housing. In order to increase the reproducibility of results, the functional element is linked with the reactor wall so as to elastically yield.

Abstract: The invention relates to a device for removably fixing a mask in the form of a rectangular frame, on the legs of which clamping means are provided for gripping the end of the mask. According to the invention, the clamping means comprise a plurality of individual spring elements which grip closely adjacent points on the mask edge. The individual spring elements which are assigned to one leg of the frame and are embodied as leaf springs that are interconnected in a comb-type manner can be moved from a fitting position in which the frame can be fitted with the mask into a clamping position by means of a common auxiliary clamping member.

Abstract: A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

Abstract: The invention relates to a device for depositing thin, especially crystalline layers on at least one substrate, especially a crystalline substrate. Said device comprises a substrate holder which is rotationally arranged in a reactor housing and at least one sensor for measuring a process parameter and a transferring means for transferring the measured values of the process parameter to an evaluation device. The inventive transfer takes place in a wireless manner. The transmitter is arranged inside the reactor housing and a receiver is arranged outside the reactor housing.

Abstract: The invention relates to a method for depositing III-V semiconductor layers that also contain nitrogen, especially for depositing II-IV compounds, oxides, especially metal oxides. According to the invention, the front face of the gas inlet element and the area of the substrate holder directly opposite said front face form electrodes that can be connected or that are connected to a high frequency reactor to produce a capacitive plasma.

Abstract: The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders in a process chamber. The substrate holders are arranged around the center of a rotating substrate holder support. Said substrate holder support forms a process chamber base together with the substrate holders, which is opposite a process chamber cover which a central gas inlet device, through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region of the process chamber floor, surrounded by a diffusion zone, from which the decomposition zone, from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate.

Abstract: The invention relates to a reaction chamber especially for carrying out substrate coating methods, such as CVD methods, characterized in that at least one opening is provided in at least one outer wall in which an HF and especially an RF feedthrough is inserted in a pressure or vacuum tight manner.