Patents by Inventor Walter H. M. M. Smulders

Walter H. M. M. Smulders has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4165516
    Abstract: A high voltage transistor having successively an emitter zone, a highly doped base part, a low doped base part, a low doped collector part and a highly-doped collector part. At a distance from the highly doped base part, a groove is provided which extends down into the highly doped collector part and forms therebelow a channel stopper. The groove may be passivated with neutral, or, if desired, with positively charged glass or oxide while still maintaining a high collector-base breakdown voltage.
    Type: Grant
    Filed: April 27, 1978
    Date of Patent: August 21, 1979
    Assignee: U.S. Philips Corporation
    Inventor: Walter H. M. M. Smulders