Abstract: The present invention relates to the use of oncolytic viruses (e.g., modified HSV-1 viruses) for the treatment of various types of cancer. In addition, the present invention relates to compositions and kits relating to such uses of oncolytic viruses.

Abstract: A self-powered electronic system comprises a first chip of single-crystalline semiconductor embedded in a second chip of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container bordered by ridges. The flat side of the slab includes a heavily n-doped region forming a pn-junction with the p-type bulk. A metal-filled deep silicon via through the p-type ridge connects the n-region with the terminal on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip of single-crystalline semiconductor embedded in a second chip of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container bordered by ridges. The flat side of the slab includes a heavily n-doped region forming a pn-junction with the p-type bulk. A metal-filled deep silicon via through the p-type ridge connects the n-region with the terminal on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A method of processing nested message layers which allows for encoding all the message layers into one formatted message buffer without incurring a copy at each message layer. A generalized approach for representing the context of each message layer and linking them to facilitate the encoding and decoding of message layers.

Abstract: A purified binding protein selected from the group consisting of insulin-like growth factor binding protein having an amino acid sequence which is at least 85% homologous to the amino acid sequence of FIG. 1 and fragments thereof comprising at least 10 consecutive amino acids of the sequence that are capable of binding to an antibody specific for the protein or to an insulin-like growth factor is described. Recombinant DNA molecules encoding the binding proteins and subsequences thereof are also described along with recombinant microorganisms and cell lines containing the DNA molecules and methods for preparing the binding proteins by growing the recombinant hosts containing the relevant DNA molecules. Antibodies to the protein, identified as IGFBP-6, which are useful in various diagnostic applications, are also described.

Abstract: A purified binding protein selected from the group consisting of insulin-like growth factor binding protein having an amino acid sequence which is at least 85% homologous to the amino acid sequence of FIG. 1 and fragments thereof comprising at least 10 consecutive amino acids of the sequence that are capable of binding to an antibody specific for the protein or to an insulin-like growth factor is described. Recombinant DNA molecules encoding the binding proteins and subsequences thereof are also described along with recombinant microorganisms and cell lines containing the DNA molecules and methods for preparing the binding proteins by growing the recombinant hosts containing the relevant DNA molecules. Antibodies to the protein, identified as IGFBP-6, which are useful in various diagnostic applications, are also described.

Abstract: A control arrangement for a heat recovery system which can be retrofitted onto existing equipment in order to utilize otherwise wasted heat. A heat source such as a conventional refrigeration system used as a source of superheated condensible heat exchange medium for supply to a heat recovery system. A liquid medium system, such as a water system is connected to the heat recovery system for receipt of heat transferred. The heat recovery system includes a plurality of heat exchangers connected in series. A control arrangement responsive to the operating conditions and safety of the heat recovery system and to the systems with which it interfaces with respect to its effect on said interfaced systems.

Abstract: The process for recovering metals of the 1.sup.st, 2.sup.nd, 4.sup.th, 5.sup.th, 6.sup.th, 7.sup.th and 8.sup.th sub-group of the periodic law from solutions of their salts, particularly from solutions containing hydrochloric acid contemplates as the first process step a neutralization (1) for precipitating the metals from their acid metal salt solutions in the form of hydroxides or carbonates. The precipitate is pressed (4), and via conduits (9, 10) finally divided metal of the metal having been present as a salt as well as a carbon source originating of waste materials, particularly in form of ground heat setting synthetic plastics materials such as phenolic resins, amine formaldehyde resins, epoxide resins, polyesters, and also CaCO.sub.3 is added. All components of this mixture must be used in a fine-grained state and preferably with a maximum particle size of 0.5 mm.

Abstract: A heat recovery system which can be retrofitted onto existing equipment in order to utilize otherwise wasted heat. A heat exchanger used in the heat recovery system is designed to expose a fluid to be heated to a hot heat exchange medium such that the fluid encounters a constantly increasing temperature of the heat exchange medium. The heat recovery system employs flow control devices to compensate for any pressure drops existing in the heat recovery system so as not to degrade the operation of the heat source nor a fluid system while maximizing heat recovery efficiency.