Abstract: LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a zinc-magnesium-manganese-silicon oxide host.

Abstract: Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-tungsten-silicon host.

Abstract: Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

Abstract: Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-tungsten-silicon host.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a barium strontium zirconate matrix doped with other metal oxides such as TiO2, CaO, B2O3, and MgO in various combinations.

Abstract: Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a barium strontium zirconate matrix doped with other metal oxides such as TiO2, CaO, B2O3, and MgO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys may be used for internal and external electrodes are disclosed. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, MnO, Nd2O3 and Nb2O5 in various combinations.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys may be used for internal and external electrodes are disclosed. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, MnO, Nd2O3 and Nb2O5 in various combinations.

Abstract: Multilayer ceramic chip capacitors (MLCC's) which satisfy X7R TCC requirements and which are compatible with silver-palladium internal electrodes. The MLCC's exhibit desirable dielectric properties—high capacitance, low dissipation factor, high insulation resistance, stable TCC—and excellent performance on highly accelerated life testing, and good resistance to dielectric breakdown. The dielectric layers include a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, barium, titanium, praseodymium, cerium, tungsten, neodymium, tungsten, tin, niobium, copper, and/or manganese in various combinations. The dielectric ceramic materials herein can be fired at less than 1150° C. with an inner electrode having 70 wt % or more Ag and 30 wt % or less Pd to form an MLCC.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors (MLCC's) which satisfy X7R TCC requirements and which are compatible with silver-palladium internal electrodes. The MLCC's exhibit desirable dielectric properties—high capacitance, low dissipation factor, high insulation resistance, stable TCC—and excellent performance on highly accelerated life testing, and good resistance to dielectric breakdown. The dielectric layers comprise a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, barium, titanium, praseodymium, cerium, tungsten, neodymium, tungsten, tin, niobium, copper, and/or manganese in various combinations. The dielectric ceramic materials herein can be fired at less than 1150° C. with an inner electrode having 70 wt % or more Ag and 30 wt % or less Pd to form an MLCC.

Abstract: Multilayer ceramic chip capacitors which satisfy X7R and BX requirements and which are compatible with silver-palladium internal electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, cerium, tungsten, copper, manganese, neodymium, niobium, silver, barium, silicon and nickel in various combinations. The dielectric ceramic materials herein can be sintered together (fired) at less than 1000° C. with an inner electrode having more than 80 wt % Ag and less than 20 wt % Pd to form a multilayer ceramic capacitor (MLCC).

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as copper and copper alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a composite oxide formed by calcining rare earth titanates, barium titanate, together with other metal oxides such as MgO, CaO, ZnO, MnO2, ZrO2, SiO2, Ga2O3, Nd2O3, Nb2O5, and Y2O3.