Abstract: A planar Schottky diode is disclosed which is inserted into a transmission line without disruption of characteristic impedance. The diode comprises a plurality of parallel finger-like projections forming Schottky contacts distributed over a width of the transmission line and also of ohmic contacts surrounding these projections but with a longer contact edge.

Abstract: The invention relates to a charge coupled element in which electrodes with blocking properties, arranged in series, are located on a semiconductor member of gallium arsenide. The semiconductor member has a semi-insulating gallium arsenide substrate on which an n-conductive layer of gallium arsenide is formed, which n-conductive layer has a charge carrier concentration of 1.multidot.10.sup.15 through 5.multidot.10.sup.17 cm.sup.-3. The electrodes form a blocking transition with this n-conductive layer.

Abstract: The invention relates to a semiconductor component element, in particular a Schottky field-effect transistor with a low series resistance, as well as a process for the production thereof.By means of a novel masking technique, it is possible for the channel region to be implanted as well as the source and drain regions, in a single implantation step. Only one photomask is necessary. By a novel masking arrangement, only a small fraction of the radiated ions get through to the region of the substrate where the channel is to be formed. This enables the formation of a Schottky contact where the channel will be formed. The source and drain regions are formed by allowing a much higher portion of the ions to reach such regions. This allows ohmic contacts to be formed on the source and drain. Thus, in the implantation of the dopant particles, regions are formed with different layer resistances in the semiconductor substrate.