Abstract: Provided herein are new methods for the fabrication of gold (Au) alloys and films containing metal or semimetal oxides such as oxides of vanadium (V), for example, Au—V2O5 for use in electrical, mechanical, and microelectromechanical systems (“MEMS”). An example embodiment provides a thin film of an alloy comprising Au—V2O5 in a MEMS for a contact switch. Also described herein are gold-metal oxide thin films for use in, e.g. wear-resistant MEMS. Measurements of contact force and electrical contact resistance between pairs of Au or Au—V films show that increased hardness and resistivity in the alloy films results in higher contact resistance and less adhesion than in pure Au.

Abstract: A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

Abstract: A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

Abstract: A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires in-situ on at least one circuit substrate and then interconnecting the nanowires to a mating substrate.

Abstract: A prdetermined amount of toothpaste sufficient for a single brushing of the teeth is encapsulated with a covering which is easily storable, non-toxic and easily breakable when chewed or bitten.

Abstract: A test assembly and wafer tube holder are provided to permit comparative ts of each elemental surface portion of a tube target as a function of position thereon and as a function of the lifetime of the tube.