Abstract: The invention relates to a process for the preparation of a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt from the silicon dioxide granulate in an oven, and iii.) Making a quartz glass body from at least a part of the glass melt, wherein the oven comprises a hanging sinter crucible. The invention also relates to a quartz glass body which is obtainable by this process. The invention further relates to a light guide, an illuminant and a formed body which are each obtainable by further processing the quartz glass body.

Abstract: One aspect relates to a process for the provision of a quartz glass body, including providing a silicon dioxide granulate, making a glass melt from the silicon dioxide granulate in an oven and making a quartz glass body from at least part of the glass melt. The oven includes a hanging metal sheet crucible. One aspect also relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body which are obtainable by processing the quartz glass body further.

Abstract: One aspect is a process for the preparation of a quartz glass body including providing a silicon dioxide granulate wherein the provision includes providing silicon dioxide powder, and processing the silicon dioxide powder to obtain a silicon dioxide granulate. The silicon dioxide granulate has a larger particle diameter than the silicon dioxide powder. The processing includes processing the silicon dioxide powder to obtain a silicon dioxide granulate I, wherein the silicon dioxide granulate I has a first carbon content wC(1), treating the silicon dioxide granulate I with a reactant to obtain a silicon dioxide granulate II with a further carbon content wC(2), wherein the further carbon content wC(2) is less than the first carbon content wC(1), making a glass melt out of the silicon dioxide granulate and making a quartz glass body out of at least part of the glass melt.

Abstract: One aspect relates to a process for preparing a quartz glass body, including providing a silicon dioxide granulate, making a glass melt from the silicon dioxide granulate in a melting crucible, making a quartz glass body from at least a part of the glass melt, and treating the quartz glass body with at least one procedure selected from the group consisting of chemical, thermal or mechanical treatment to obtain a treated quartz glass body. One aspect also relates to a quartz glass body which is obtainable by this process. One aspect also concerns a light guide, an illuminant and a formed body each obtainable by processing the quartz glass body further.

Abstract: The invention relates to a process for preparing a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt from the silicon dioxide granulate in a melting crucible, and iii.) Making a quartz glass body from at least a part of the glass melt, wherein the melting crucible is comprised in an oven and is made of at least one material comprising tungsten or molybdenum or a combination thereof. The invention further relates to a quartz glass body which can be obtained by this process. Further, the invention relates to a light guide, an illuminant and a formed body, each of which can be obtained by processing the quartz glass body further.

Abstract: The invention relates to a process for the preparation of a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt out of the silicon dioxide granulate and iii) Making a quartz glass body out of at least part of the glass melt, wherein the provision comprises the steps I. Providing a silicon dioxide powder with at least two particles made from a silicon-chlorine compound, II. Bringing the silicon dioxide powder into contact with steam to obtain a treated silicon dioxide powder and III. Granulating the treated silicon dioxide powder to obtain a silicon dioxide granulate, and wherein the chorine content of the silicon dioxide powder is greater than the chlorine content of the silicon dioxide granulate. The invention further relates to a quartz glass body which is obtainable by this process. The invention further relates to a process for providing a silicon dioxide granulate.

Abstract: The invention relates to a process for the preparation of a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate obtainable from a silicon dioxide powder, wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder, ii.) Making a glass melt out of silicon dioxide granulate and iii.) Making a quartz glass body out of at least part of the glass melt, wherein the melting crucible has at least one inlet and at least one outlet, wherein at least part of the glass melt is removed via the melting crucible outlet. The invention further relates to a quartz glass body which is obtainable by this process. The invention further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

Abstract: The invention relates to a process for the preparation of a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m2/g, ii.) Making a glass melt out of silicon dioxide granulate in an oven and iii.) Making a quartz glass body out of at least part of the glass melt, wherein the oven has at least a first and a further chamber connected to one another via a passage, wherein the temperature in the first chamber is lower than the temperature in the further chambers. The invention further relates to a quartz glass body which is obtainable by this process. The invention further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

Abstract: The invention relates to a process for the preparation of a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt out of silicon dioxide granulate in an oven and iii.) Making a quartz glass body out of at least part of the glass melt, wherein the oven comprises a standing sinter crucible. The invention further relates to a quartz glass body which is obtainable by this process. The invention further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

Abstract: One aspect relates to a process for the preparation of a quartz glass body, including provision of a silicon dioxide granulate, making a glass melt from the silicon dioxide granulate and making a quartz glass body from at least part of the glass melt. The provision includes making a silicon dioxide powder with at least two particles prepared from a silicon-chlorine compound, bringing the silicon dioxide powder into contact with ammonia to obtain a treated silicon dioxide powder, and granulating the treated silicon dioxide powder to obtain a silicon dioxide granulate. The chlorine content of the silicon dioxide powder is greater than the chlorine content of the silicon dioxide granulate. One aspect relates further to a quartz glass body which is obtainable by this process. One aspect also relates to a process for the preparation of a silicon dioxide granulate.

Abstract: One aspect relates to a process for the preparation of a quartz glass grain, including providing a silicon dioxide granulate from a pyrogenically produced silicon dioxide powder, making a glass melt out of silicon dioxide granulate, making a quartz glass body out of at least part of the glass melt and reducing the size of the quartz glass body to obtain the quartz glass grain. One aspect further relates to a quartz glass grain which is obtainable by this process. One aspect further relates to opaque quartz glass bodies, which are obtainable by further processing of the quartz glass grain.

Abstract: A method for producing a component with portions of a rare earth metal-doped quartz glass, an intermediate product containing voids and consisting of a SiO2 raw material doped with rare earth metal is introduced into a sinter mold the interior of which is bordered by a carbonaceous mold wall, and is melted therein into the component by gas pressure sintering at a maximum temperature above 1500° C. A shield is arranged between the mold wall and the intermediate product. In order to indicate a modified gas pressure sintering method that ensures the production of rare earth metal-doped quartz glass with reproducible properties, a bulk material of amorphous SiO2 particles with a layer thickness of at least 2 mm is used as the shield, the softening temperature thereof being at least 20° C.

Abstract: In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterised by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

Abstract: In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterized by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

Abstract: A method for producing rare earth metal-doped quartz glass includes the steps of (a) providing a blank of the rare earth metal-doped quartz glass, and (b) homogenizing the blank by softening the blank zone by zone in a heating zone and by twisting the softened zone along a rotation axis. Some rare earth metals, however, show a discoloration of the quartz glass, which hints at an unforeseeable and undesired change in the chemical composition or possibly at an inhomogeneous distribution of the dopants. To avoid this drawback and to provide a modified method which ensures the production of rare earth metal-doped quartz glass with reproducible properties, during homogenization according to method step (b), the blank is softened under the action of an oxidizingly acting or a neutral plasma.

Abstract: A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiO2 particles, applying a SiO2-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO2-containing grain layer and thermally densifying the SiO2-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiO2 particles that form a coarse fraction and a fine fraction with SiO2 nanoparticles. The weight percentage of the SiO2 nanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO2-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process.

Abstract: The production of a quartz glass grit comprises the granulation of pyrogenetically produced silicic acid, and the formation of a SiO2 granulate and the vitrification of the SiO2 granulate using a treatment gas, which contains at least 30% by volume of helium and/or hydrogen. Said process is time consuming and cost intensive.

Abstract: The production of quartz glass granules comprises the granulation of pyrogenically produced silicic acid and the formation of a SiO2 granulate (9), the drying and cleaning of the SiO2 granulate (9) by heating in an atmosphere containing halogen, and the vitrification of the SiO2 granulate (9) under a treatment gas which contains at least 30% by volume of helium and/or hydrogen. This process is time-consuming and expensive.

Abstract: A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiO2 particles, applying a SiO2-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO2-containing grain layer and thermally densifying the SiO2-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiO2 particles that form a coarse fraction and a fine fraction with SiO2 nanoparticles. The weight percentage of the SiO2 nanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO2-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process.

Abstract: In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterised by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.