Abstract: A thermosonic ribbon bonding process uses a combination of a relatively low temperature and a high frequency to bond a ribbon conductor to conductive bonding sites of a system level support structure, such as a space/airborne antenna, containing circuit components whose characteristics might otherwise be degraded at an elevated temperature customarily used in device-level thermosonic bonding processes. By relatively low temperature is meant a temperature no greater than the minimum temperature that would potentially cause a modification of the circuit parameters of at least one of the system's components. Such a minimum temperature may lie in a range on the order of 25-85.degree. C., while the ultrasonic bonding frequency preferably lies in a range of from 122 KHz to 140 KHz. For gold ribbon to gold pad bonds, this high frequency range achieves the requisite atomic diffusion bonding energy, without causing fracturing or destruction of the gold ribbon or its interface with the gold pad.

Abstract: An interconnect laminate structure integrates RF and auxiliary (e.g. digital and D.C.) signalling capabilities in a common structure by means of a stacked conductor-plated dielectric configuration that facilitates access to and routing by channelline/waffleline RF transmission links and separate control (e.g. digital, power supply) links, without having to perform laborious manual routing tasks to effect auxiliary connectivity among the components of a network. The interconnect structure includes a first dielectric layer having a channel formed in a first surface thereof, the channel having a conductive surface and configured to accommodate the insertion of a dielectric coated conductor into the channel so as to form an RF transmission line. Second dielectric layers, each of which has a conductive layer formed on a first surface thereof, are mounted together with the first dielectric layer in a laminate assembly.

Abstract: A three-state, two-output R.F. power divider is configured as a microstrip device having an input port and first and second output ports. Between these three ports there is disposed a substantially T-shaped microstrip transmission line structure such that the input port is coupled to a base portion of the T-shaped structure and the first and second output ports are coupled to opposite ends of a top portion of the T-shaped structure. A substantially U-shaped microstrip transmission line structure is intercoupled with the T-shaped structure such that end portions of the U-shaped structure are coupled to the top portion of the T-shaped structure and a bottom portion of the U-shaped structure is coupled to the base portion of the T-shaped structure. A first PIN diode is coupled between a first location of the T-shaped structure and a ground plane brassboard underlying the dielectric layer on which the microstrip metalization is formed.