Abstract: A method of manufacturing a packaged semiconductor device is provided. The method includes attaching a semiconductor die to a package substrate. A bond pad of the semiconductor die is coupled to an antenna radiator formed on the package substrate. A waveguide is attached to the package substrate. An opening of the waveguide includes sidewalls substantially surrounding the antenna radiator. An epoxy material is deposited over at least a portion of the package substrate while leaving the opening void of epoxy material.

Abstract: A method of manufacturing a packaged semiconductor device is provided. The method includes attaching a semiconductor die to a package substrate. A bond pad of the semiconductor die is coupled to an antenna radiator formed on the package substrate. A waveguide is attached to the package substrate. An opening of the waveguide includes sidewalls substantially surrounding the antenna radiator. An epoxy material is deposited over at least a portion of the package substrate while leaving the opening void of epoxy material.

Abstract: A method of manufacturing a packaged semiconductor device including forming an assembly by coupling a semiconductor die and an antenna by way of a substrate, contacting with a conformal structure at least a portion of a first surface of the antenna, and encapsulating the assembly with an encapsulant such that the at least a portion of the first surface of the antenna contacted by the conformal structure is not encapsulated with the encapsulant.

Abstract: A packaged semiconductor device includes a substrate having a ground plane, a first communication port on the substrate, a second communication port on the substrate adjacent the first communication port, and grounding structures on the substrate. Each of the grounding structures is in contact with two different locations on the ground plane and is adjacent to one of the first and second communication ports. An electrically insulating material completely covers a top side of each of the grounding structures.

Abstract: Shielded and packaged electronic devices, electronic assemblies, and methods are disclosed herein. The shielded and packaged electronic devices include a packaged electronic device with a package surface and a plurality of electrically conductive package pads arranged on the package surface, a shielding dielectric layer extending in contact with the package surface and having a shielding layer surface and a plurality of openings that extends between the shielding layer surface and the plurality of electrically conductive package pads, and a plurality of electrical conductors that extends from the plurality of electrically conductive package pads and projects from the shielding layer surface. The electronic assemblies include a printed circuit board with a board surface and a plurality of electrically conductive board pads arranged on the board surface, the shielded and packaged electronic device, and an underfill dielectric layer. The methods include methods of manufacturing the electronic assemblies.

Abstract: Shielded and packaged electronic devices, electronic assemblies, and methods are disclosed herein. The shielded and packaged electronic devices include a packaged electronic device with a package surface and a plurality of electrically conductive package pads arranged on the package surface, a shielding dielectric layer extending in contact with the package surface and having a shielding layer surface and a plurality of openings that extends between the shielding layer surface and the plurality of electrically conductive package pads, and a plurality of electrical conductors that extends from the plurality of electrically conductive package pads and projects from the shielding layer surface. The electronic assemblies include a printed circuit board with a board surface and a plurality of electrically conductive board pads arranged on the board surface, the shielded and packaged electronic device, and an underfill dielectric layer. The methods include methods of manufacturing the electronic assemblies.

Abstract: A method and apparatus are provided for manufacturing a packaged electronic device (200) which includes a carrier substrate (120) in which conductive interconnect paths (122) extend between first and second opposed surfaces, an integrated circuit die (125) affixed to the first surface of the carrier substrate for electrical connection to the plurality of conductive interconnect paths, and an array of conductors (110), such as BGA, LGA, PGA, C4 bump or flip chip conductors, affixed to the second surface of the carrier substrate for electrical connection to the plurality of conductive interconnect paths, where the array comprising a signal feed ball (112) and an array of shielding ground balls (111) surrounding the signal feed ball.

Abstract: A method and apparatus are provided for manufacturing a packaged electronic device (200) which includes a carrier substrate (120) in which conductive interconnect paths (122) extend between first and second opposed surfaces, an integrated circuit die (125) affixed to the first surface of the carrier substrate for electrical connection to the plurality of conductive interconnect paths, and an array of conductors (110), such as BGA, LGA, PGA, C4 bump or flip chip conductors, affixed to the second surface of the carrier substrate for electrical connection to the plurality of conductive interconnect paths, where the array comprising a signal feed ball (112) and an array of shielding ground balls (111) surrounding the signal feed ball.

Abstract: An integrated antenna package includes an interposer, an integrated circuit die, and a cap that forms a cavity within the integrated antenna package. A lossy EBG structure resides at the cap overlying the integrated circuit device. A lossless EBG structure resides at the cap overlying a microstrip feedline. A radar module includes a plurality of receive portions, each receive portion including a parabolic structure having a reflective surface, an absorber structure, a lens, and an antenna.

Abstract: An integrated antenna package includes an interposer, an integrated circuit die, and a cap that forms a cavity within the integrated antenna package. A lossy ERG structure resides at the cap overlying the integrated circuit device. A lossless EBG structure resides at the cap overlying a microstrip feedline. A radar module includes a plurality of receive portions, each receive portion including a parabolic structure having a reflective surface, an absorber structure, a lens, and an antenna.

Abstract: An electromagnetic band gap device is provided, comprising: a conductive plane; a non-conductive substrate located over the conductive plane; and an electromagnetic band gap unit cell that includes a first via located in the non-conductive substrate and filled with a conductive material, a second via located in the non-conductive substrate and filled with the conductive material, a first conductive surface located on the non-conductive substrate over the first via, and a second conductive surface located on the non-conductive substrate over the second via, wherein the electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane, at least one gap is located in the electromagnetic band gap unit cell, the at least one gap being located in the first via, in the first conductive surface, in the second conductive surface, and in the second via.

Abstract: An electromagnetic band gap device is provided, comprising: a conductive plane; a non-conductive substrate located over the conductive plane; and an electromagnetic band gap unit cell that includes a first via located in the non-conductive substrate and filled with a conductive material, a second via located in the non-conductive substrate and filled with the conductive material, a first conductive surface located on the non-conductive substrate over the first via, and a second conductive surface located on the non-conductive substrate over the second via, wherein the electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane, at least one gap is located in the electromagnetic band gap unit cell, the at least one gap being located in the first via, in the first conductive surface, in the second conductive surface, and in the second via.

Abstract: An integrated antenna package includes an interposer, an integrated circuit die, and a cap that forms a cavity within the integrated antenna package. A lossy EBG structure resides at the cap overlying the integrated circuit device. A lossless EBG structure resides at the cap overlying a microstrip feedline. A radar module includes a plurality of receive portions, each receive portion including a parabolic structure having a reflective surface, an absorber structure, a lens, and an antenna.

Abstract: An integrated antenna package includes an interposer, an integrated circuit die, and a cap that forms a cavity within the integrated antenna package. A lossy ERG structure resides at the cap overlying the integrated circuit device. A lossless EBG structure resides at the cap overlying a microstrip feedline. A radar module includes a plurality of receive portions, each receive portion including a parabolic structure having a reflective surface, an absorber structure, a lens, and an antenna.

Abstract: Apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.

Abstract: Method and apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.

Abstract: Apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.

Abstract: Method and apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.