Abstract: A semiconductor laser mount is disclosed for use in high frequency (>500 Mb/s) applications. The mount comprises a stripline transmission path and resistive element formed in series with the optical device. Since the current sources used to modulate optical devices at these bit rates have a large impedance relative to that of the optical devices, the stripline is used as an impedance controlling network to provide frequency independent coupling from the signal source to the device and the resistive element is used to compensate the variation of the impedance of the device to essentially match that of the stripline. Since the impedance of individual optical devices may vary, the resistive element is sized to provide optimum matching. Both the stripline and resistive element are integrated with the mount material to form a monolithic structure.

Abstract: The specification describes an improved form of heterostructure laser, termed a "Rib-Loc" laser. It is an easily fabricated device with desirable electrical and optical properties. The Rib-Loc is simple to fabricate because a single, self-aligned rib provides ohmic contact, current confinement and lateral waveguiding. A deeply etched P-cladding layer outside the rib provides the positive index change needed for an index-guided laser. The large optical cavity increases the maximum power output and reduces the aspect ratio of the beam.

Abstract: An enclosed electrical device (42) includes an electrical circuit (50) having elements (48-68) which lie substantially in and along a plane (115). A member (70) is applied to a one side and a member (85) is applied to another side of the circuit (50) for at least partially enclosing the same. Conductors (48) and (49) of circuit (50) are fixedly penetrated, preferably by pins (74) which are fixedly engaged to enclosure members (70) and (85). Such engagement is advantageously provided by making the pins (74) an integral part of member (70), for example by including pins (74) in a premolded member (70). Such engagement is also advantageously provided by making pin-engaging sockets (94) an integral part of member (85), also for example by including the sockets (94) in a premolded member (85). By a preferred friction fit of pins (74) and sockets (94), the enclosure members (70) and (85 ) and circuit elements (48-68) are sufficiently fixed relative to one another to resist forces applied thereto in service.

Abstract: A removable mask (22) protects at least one portion of a substrate (10) during treatment such as irradiation thereof. To obtain mask (22), there is applied over said portion of substrate (10) a parting layer (44) of a metal selected from the group consisting of nickel, aluminum, indium and tin. Over the parting layer (44), there is applied the removable mask (22) of a material which is adherent and harmless to the parting layer (44) and is substantially impenetrable by the treatment. After irradiation, the parting layer (44) is treated with at least a detaching agent sufficiently to detach said parting layer (44) and the mask (22) from substrate (10). For proton bombardment of a substrate (10) which includes gallium arsenide, the parting layer (44) is preferably nickel, the mask is preferably gold and the detaching agent includes hydrochloric acid.

Abstract: Disclosed is a method of bonding microelectronic chips to bonding surfaces utilizing thin, soft bonding material preforms. The bonding material, such as indium, is formed on a carrier strip. A portion of the material is transferred from the strip by bringing it in contact with the bonding surface and supplying pressure to the strip. The chip may then be bonded to the coated surface.