Abstract: The performance of a silicon photovoltaic cell is improved while process yield is maintained by first forming doped regions in a major surface of a silicon wafer and providing electrical interconnections to the doped regions prior to thinning the wafer by etching another major surface of the wafer. A passivating antireflection layer is applied to the etched surface after the surface is precleaned. The precleaning can be by ammonia plasma applied in situ as a precursor to depositing silicon nitride as the passivation layer.

Abstract: An improved textured surface of a photovoltaic device is provided by an anisotropic etching process in which pyramidal structures are formed on a silicon surface having a (100) crystallographic orientation. An aqueous solution of an alkali metal hydroxide is heated to approximately 85.degree. C. whereupon isopropyl alcohol is added. Separated silicon wafers are immersed in the solution for approximately 45 minutes. The wafers can be agitated for a limited time in the solution, and preferably the wafers and solution are covered during the etching step. The resulting pyramids are on the order of 14 microns high and 20 microns on each side of the base. The overlap of the pyramids provides desired random locations for the pyramids.