Patents by Inventor Walter Riess
Walter Riess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120325144Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.Type: ApplicationFiled: September 5, 2012Publication date: December 27, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas Brunschwiler, Siegfried F. Karg, Walter Riess
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Patent number: 8288941Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.Type: GrantFiled: August 16, 2010Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Thomas Brunschwiler, Siegfried F Karg, Walter Riess
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Patent number: 8021710Abstract: The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.Type: GrantFiled: August 16, 2005Date of Patent: September 20, 2011Assignee: International Business Machines CorporationInventors: Thomas Brunschwiler, Siegfried F. Karg, Walter Riess
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Publication number: 20100308316Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.Type: ApplicationFiled: August 16, 2010Publication date: December 9, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas Brunschwiler, Siegfried F. Karg, Walter Riess
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Publication number: 20090298209Abstract: A method for manufacturing an optoelectronic device including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics includes steps of: producing an optoelectronic member for generating photons of a predefined wavelength; producing a light emitting surface on the optoelectronic member; and producing a capping layer on the light emitting surface.Type: ApplicationFiled: August 10, 2009Publication date: December 3, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Walter Riess, Heike E. Riel, Siegfried F. Karg
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Publication number: 20070087220Abstract: An electroluminescent device is provided that in sequence comprises an anode, a hole injecting layer, an emission layer comprising an emitting material, an electron injecting layer, and a cathode. The emission layer further comprises a stabilizing material whose energy bandgap is larger than the energy bandgap of the emitting material.Type: ApplicationFiled: August 25, 2006Publication date: April 19, 2007Applicant: International Business Machines CorporationInventors: Santos Alvarado, Tilman Beierlein, Brian Crone, Siegfried Karg, Peter Mueller, Heike Riel, Walter Riess, Beat Ruhstaller
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Publication number: 20060289908Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.Type: ApplicationFiled: August 31, 2006Publication date: December 28, 2006Applicant: International Business Machines CorporationInventors: Georg Bednorz, David Gundlach, Siegfried Karg, Gerhard Meijer, Heike Riel, Walter Riess
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Patent number: 7122254Abstract: An electrode comprises an inorganic composite layer of a mixture of at least one insulating inorganic material and at least one at least partially conducting inorganic material. In an application of such an electrode, an organic electroluminescent device comprises a first and second conductor layers. An organic layer is disposed between the first and second conductor layers. The aforementioned composite layer is disposed between the organic layer and the first conductor layer. Methods of fabricating such an electrode and such a device are also described.Type: GrantFiled: October 3, 2001Date of Patent: October 17, 2006Assignee: International Business Machines CorporationInventors: Tilman A. Beierlein, Jean Fompeyrine, Eliav Haskal, Heike Riel, Walter Riess
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Publication number: 20060046342Abstract: A method for manufacturing an organic electronic device including a stack of layers with a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.Type: ApplicationFiled: August 29, 2005Publication date: March 2, 2006Applicant: International Business Machines CorporationInventors: Siegfried Karg, Bruno Michel, Heike Riel, Walter Riess
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Publication number: 20060038170Abstract: The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.Type: ApplicationFiled: August 16, 2005Publication date: February 23, 2006Applicant: International Business Machines CorporationInventors: Thomas Brunschwiler, Siegfried Karg, Walter Riess
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Patent number: 6995391Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.Type: GrantFiled: November 26, 2002Date of Patent: February 7, 2006Assignee: International Business Machines CorporationInventors: Santos F. Alvarado, Tilman A. Beierlein, Brian K. Crone, Ute Drechsler, Roland Germann, Siegfried F. Karg, Peter Mueller, Lieike Riel, Walter Riess, Beat Ruhstaller, Paul Seidler, Roland Widmer
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Publication number: 20060011933Abstract: Provides optoelectronic devices and methods for manufacturing an optoelectronic devices. Optoelectronic devices including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics. The present invention is particularly advantageous for top-emitting devices and for organic light emitting devices. An example optoelectronic device includes an optoelectronic member for emitting light, a light emitting surface and a capping layer on the light emitting surface. The capping layer includes a mixture of a first material having a first refractive index and a second material having a second refractive index.Type: ApplicationFiled: July 15, 2005Publication date: January 19, 2006Applicant: International Business Machines CorporationInventors: Walter Riess, Heike Riel, Siegfried Karg
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Patent number: 6960782Abstract: Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.Type: GrantFiled: April 28, 2003Date of Patent: November 1, 2005Assignee: International Business Machines CorporationInventors: Rolf Allenspach, Urs T. Duerig, Walter Riess, Reto Schlittler
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Publication number: 20050111252Abstract: A field effect device (2) comprises a source electrode (14), a drain electrode (16), a channel (24) formed between the source electrode (14) and the drain electrode (16), and a gate electrode (22) separated from the channel (24) by an insulating layer (20), wherein the channel (24) comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.Type: ApplicationFiled: November 12, 2004Publication date: May 26, 2005Applicant: International Business Machines CorporationInventors: Georg Bednorz, David Gundlach, Siegfried Karg, Gerhard Meijer, Heike Riel, Walter Riess
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Publication number: 20050111256Abstract: A device (2) with a switchable capacitance comprises a first and a second electrode (12, 20) facing each other, a dielectric layer (14) between a first and a second capacitor electrode (12, 20), and a switching member (18) between the second electrode (20) and the dielectric layer (14), the switching member (18) comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device (2) depends on the conductivity state of the switching material.Type: ApplicationFiled: November 10, 2004Publication date: May 26, 2005Applicant: International Business Machine CorporationInventors: Georg Bednorz, David Gundlach, Gerhard Meijer, Walter Riess
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Publication number: 20050045873Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.Type: ApplicationFiled: November 26, 2002Publication date: March 3, 2005Inventors: Santos Alvarado, Tilman Beierlein, Brian Corne, Ute Drechsler, Roland Germann, Siegfried Karg, Peter Mueller, Iieike Riel, Walter Riess, Beat ruhstaller, Paul Seidler, Roland Widmer
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Publication number: 20050009231Abstract: The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.Type: ApplicationFiled: May 24, 2004Publication date: January 13, 2005Applicant: International Business Machines CorporationInventors: Siegfried Karg, Heike Riel, Walter Riess
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Publication number: 20040016922Abstract: Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.Type: ApplicationFiled: April 28, 2003Publication date: January 29, 2004Inventors: Rolf Allenspach, Urs T. Duerig, Walter Riess, Reto Schlittler
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Patent number: 6501217Abstract: An organic light emitting device is provided which includes a cathode (51), an anode (47, 46, 48), and an organic electroluminescent region (49, 50). The anode includes a metal layer (46), a barrier layer (47), and an anode modification layer (48). Light is emitted through the cathode (51) when a voltage is applied between the anode (47, 46, 48) and the cathode (51).Type: GrantFiled: January 10, 2000Date of Patent: December 31, 2002Assignee: International Business Machines CorporationInventors: Tilman A. Beierlein, Eliav Haskal, Heike Riel, Walter Riess, Paul Seidler, Samuel Clagett Strite, Horst Vestweber
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Patent number: 6472804Abstract: An electrode for an electro-optical device is provided. Light is passing through this electrode which comprises a pattern of conductive elements. The elements have dimensions small compared to the wavelength of light, so that the electrode appear transparent. The light intensity distribution after having penetrated the electrode compared with the light intensity distribution before having penetrated the electrode is influenced by forward scattering.Type: GrantFiled: June 25, 1999Date of Patent: October 29, 2002Assignee: International Business Machines CorporationInventors: Peter Mueller, Walter Riess