Patents by Inventor Walter Schoenleber
Walter Schoenleber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7086929Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: July 8, 2003Date of Patent: August 8, 2006Assignee: Applied MaterialsInventors: Andreas Norbert Wiswesser, Walter Schoenleber
-
Patent number: 7018271Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: June 15, 2004Date of Patent: March 28, 2006Assignee: Applied Materials Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
-
Patent number: 6986699Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: May 8, 2001Date of Patent: January 17, 2006Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek, Manoocher Birang
-
Publication number: 20040242123Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: ApplicationFiled: June 15, 2004Publication date: December 2, 2004Applicant: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
-
Publication number: 20040224524Abstract: An apparatus for etching a metal-containing material of a lithographic mask has a chamber with a support for supporting the mask inside the chamber. Over the metal-containing material, the mask comprises a resist layer having features with sidewalls. A gas distributor, gas energizer, and gas exhaust are provided. A controller is provided that is adapted to control one or more of the gas distributor, gas energizer, and gas exhaust to (i) deposit a sacrificial coating on the sidewalls of the features in the resist layer, and (ii) etch the metal-containing material of the mask. Coincidental etching of the sidewalls of the features in the resist layer overlying the metal-containing material is reduced by the sacrificial coating formed thereon.Type: ApplicationFiled: May 9, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Alfred Wolfgang Koenig, Henry Christopher Hamaker, Walter Schoenleber
-
Patent number: 6764380Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: January 14, 2003Date of Patent: July 20, 2004Assignee: Applied Materials Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
-
Publication number: 20040058621Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: ApplicationFiled: July 8, 2003Publication date: March 25, 2004Inventors: Andreas Norbert Wiswesser, Walter Schoenleber
-
Publication number: 20030104761Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: ApplicationFiled: January 14, 2003Publication date: June 5, 2003Applicant: Applied Materials, Inc., a Delaware corporationInventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
-
Patent number: 6524165Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: October 23, 2000Date of Patent: February 25, 2003Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
-
Publication number: 20010027080Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: ApplicationFiled: May 8, 2001Publication date: October 4, 2001Applicant: Applied Materials, Inc., Delaware corporationInventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek, Manoocher Birang
-
Patent number: 6247998Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: January 25, 1999Date of Patent: June 19, 2001Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek, Manoocher Birang
-
Patent number: 6221784Abstract: An apparatus and method for in-situ etching of a substrate comprising both a polysilicon layer and an overlying dielectric layer. An embodiment of the method comprises an anisotropic etch of the dielectric layer in a chamber using a first fluorinated gas (such as CF4, NF3, SF6, and the like) as an etch gas to expose at least a portion of underlying polysilicon layer. Following the anisotropic etch and without removing the substrate from the chamber, i.e., in situ, an isotropic etch is preformed on the underlying polysilicon layer using a second fluorinated gas (such as CF4, NF3, SF6, and the like) as an etch gas.Type: GrantFiled: November 29, 1999Date of Patent: April 24, 2001Assignee: Applied Materials Inc.Inventors: Ursula Schmidt, Walter Schoenleber, Michael Schmidt
-
Patent number: 6159073Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: November 2, 1998Date of Patent: December 12, 2000Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek