Abstract: A measuring system is disclosed with enhanced resolution for periodic structures on a substrate for semiconductor manufacture. Aperture structures of varying geometries are provided in the illumination beam path. The aperture structures differ regarding the transmission characteristics of light, and which adjust the intensity distribution of the diffraction orders in the imaging pupil of the optical system.

Abstract: A method and a device for improving the measurement accuracy in the nm range for optical systems are disclosed. The object is provided with a plurality of structures oriented in the X and Y-coordinate direction. The light beam coming from at least one light source defines an optical illumination path.

Abstract: A method and a device are disclosed, with which an improvement of the measurement accuracy for the determination of structure data is possible. There is provided a device having a support table (4) movable in the X-coordinate direction and the Y-coordinate direction, on which an additional holder (6) for holding a substrate (2) is carried, having at least one light source (16; 20), at least one objective (8) and a first detector unit (15a) receiving the light transmitted or reflected by structures applied to the substrate (2). There is further provided a polarization means (30a; 30b) associated with the light source (16; 20) and/or located in an optical imaging path (10; 12).

Abstract: A measuring system is disclosed with enhanced resolution for periodic structures on a substrate for semiconductor manufacture. Aperture structures of varying geometries are provided in the illumination beam path. The aperture structures differ regarding the transmission characteristics of light, and which adjust the intensity distribution of the diffraction orders in the imaging pupil of the optical system.

Abstract: A test mask 1 for microscopy is disclosed, which is formed on a substrate of quartz. The test mask 1 comprises a multiplicity of sub-masks 4, which are implemented such that each sub-mask 4 comprises structures which differ within a sub-mask 4 with regard to form and size. In addition, the structures of the individual sub-masks 4 are designed for optical or particle optical measurements according to size.

Abstract: A test mask 1 for microscopy is disclosed, which is formed on a substrate of quartz. The test mask 1 comprises a multiplicity of sub-masks 4, which are implemented such that each sub-mask 4 comprises structures which differ within a sub-mask 4 with regard to form and size. In addition, the structures of the individual sub-masks 4 are designed for optical or particle optical measurements according to size.

Abstract: A method and an apparatus are disclosed, whereby an improvement of the measuring accuracy in the determination of structural data is facilitated. A first detector unit (15a) is provided for receiving the light reflected or transmitted by structures applied on the microscopic component (2). A second detector (15b) is provided for detecting the illumination intensity emitted by the at least one light source, and a computer (18) for determining the structural data from the light received by the first detector unit (15a) and the second detector (15).