Abstract: An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier.

Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Abstract: A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface.

Abstract: An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.

Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.

Abstract: An optoelectronic module has at least one carrier with at least one contact location. A semiconductor chip emitting radiation includes a first contact surface and a second contact surface. An electrically insulating layer has a first and a second recess. The first contact surface is disposed on the side of the semiconductor chip emitting radiation facing away from the carrier. The electrically insulating layer is applied at least in places to the carrier. The semiconductor chip includes the first recess in the area of the first contact surface and the second recess in the area of the contact location. A electrically conductive conductor structure is disposed on the electrically insulating layer. The first contact surface electrically contacts the contact location of the carrier. The electrically insulating layer is formed predominately from a ceramic material.

Abstract: An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein at least one electrical connection region, on which a metallization bump is arranged, is arranged on the radiation exit side, the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by the metallization bump.

Abstract: An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact region (10) is mounted on the surface (8) of the semiconductor chip (7) remote from the carrier element (3). The connection region (5) is electrically conductively connected to the contact region (10) by way of an unsupported conductive structure (13). A method for manufacturing an opto-electronic component is described.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.

Abstract: An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4).

Abstract: An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

Abstract: A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.

Abstract: An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.