Abstract: The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes.

Abstract: The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes.

Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.