Abstract: Outgassing products, which are formed during the exposure of photoresist systems by laser irradiation, are adsorbed on a proof plate for further analysis.

Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: A method for forming a lithography mask on a surface region of a wafer is presented. In one embodiment of the method according to the invention time periods from the end of an exposure operation until the beginning of a thermal aftertreatment for the sections of the semiconductor material region are to be identical or approximately identical.

Abstract: The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: The outgassing products, which are formed when photoresist systems, are exposed to laser radiation are verified by a mass spectrometer connected to the irradiation chamber.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: Outgassing products, which are formed during the exposure of photoresist systems by laser irradiation, are adsorbed on a proof plate for further analysis.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: A method for producing organic electroluminescent components having a structured electrode, in particular displays having a structured metal electrode, includes the following steps: At least two layers are applied onto a bottom electrode which is located on a substrate. The first layer is electrically insulating and is not damaged when the second layer is applied. A defined boundary remains between the two layers. The first layer has a higher solubility rate in a liquid developer than the second layer and it is possible to structure the second layer. The second layer is structured and the structure is transferred to the first layer. At least one organic functional layer is applied onto the second layer. A top electrode is deposited onto the organic functional layer.

Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.