Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.

Abstract: A method of circulating tumor cells isolation, using an isolating cultural system of circulating tumor cells, comprises the following steps: (1) providing a sample; (2) adding a cell culture medium to the isolating cultural system of circulating tumor cells; (3) adding the sample to the isolating cultural system of circulating tumor cells to cultivate; and (4) collecting the suspended circulating tumor cells in the cell culture medium; wherein the isolating cultural system of circulating tumor cells comprises a container including a cell adhesion portion, and cellulose coated on the cell adhesion portion.

Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.

Abstract: An image sensor includes a substrate, a photosensitive unit, a first grid and a color filter. The photosensitive unit is located within the substrate. The first grid is located above the substrate, and the first grid has a first portion and a second portion above the first portion, wherein the second portion has a rounded top surface extending from a sidewall of the first portion of the first grid. The color filter is located above the photosensitive unit and in contact with the rounded top surface of the second portion of the first grid.

Abstract: A method of circulating tumor cells isolation, using an isolating cultural system of circulating tumor cells, comprises the following steps: (1) providing a sample; (2) adding a cell culture medium to the isolating cultural system of circulating tumor cells; (3) adding the sample to the isolating cultural system of circulating tumor cells to cultivate; and (4) collecting the suspended circulating tumor cells in the cell culture medium; wherein the isolating cultural system of circulating tumor cells comprises a container including a cell adhesion portion, and cellulose coated on the cell adhesion portion.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.

Abstract: An image sensor includes a substrate, a photosensitive unit, a first grid and a color filter. The photosensitive unit is located within the substrate. The first grid is located above the substrate, and the first grid has a first portion and a second portion above the first portion, wherein the second portion has a rounded top surface extending from a sidewall of the first portion of the first grid. The color filter is located above the photosensitive unit and in contact with the rounded top surface of the second portion of the first grid.

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.