Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: The present invention discloses a parameter generating device and the method thereof to generate a parameter for circuit operation in which the parameter corresponds to an N degree polynomial of a characteristic curve while said N is a positive integer. The parameter generating device comprises: a storage circuit to store at least N+1 initial values that are determined by a start value and a unit variation amount; and a parameter calculating circuit, coupled to the storage circuit, to carry out addition calculation for at least [(K?1)×N+1] time(s) if a multiple K is positive or subtraction calculation for at least ?K×N time(s) if the multiple K is negative, so as to generate the aforementioned parameter, wherein the multiple K is derived from a difference divided by the unit variation amount while the difference is a current value minus the start value.

Abstract: An LED chip is disclosed. The LED chip includes a substrate and a semiconductor element formed on the substrate. A recess is formed on the semiconductor element so as to expose a first-type of semiconductor layer thereof to the environment. The LED chip also includes a conductive layer disposed on a second-type semiconductor layer of the semiconductor element, a first electrode disposed in the recess and electrically connected to the first-type of semiconductor layer, and a second electrode disposed on the conductive layer. In addition, the LED chip includes a first circular electrode disposed on the conductive layer and extending along an edge of the substrate and electrically connected to the second electrode.

Abstract: An LED chip is disclosed. The LED chip includes a substrate and a semiconductor element formed on the substrate. A recess is formed on the semiconductor element so as to expose a first-type of semiconductor layer thereof to the environment. The LED chip also includes a conductive layer disposed on a second-type semiconductor layer of the semiconductor element, a first electrode disposed in the recess and electrically connected to the first-type of semiconductor layer, and a second electrode disposed on the conductive layer. In addition, the LED chip includes a first circular electrode disposed on the conductive layer and extending along an edge of the substrate and electrically connected to the second electrode.

Abstract: A method of inhibiting the growth of Gram-positive bacteria comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is provided. The Gram-positive bacteria comprise methicillin-resistant Staphylococcus aureus. A method of treating sepsis comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is also provided. A method of treating leukemia comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is further provided.

Abstract: The present invention discloses a parameter generating device and the method thereof to generate a parameter for circuit operation in which the parameter corresponds to an N degree polynomial of a characteristic curve while said N is a positive integer. The parameter generating device comprises: a storage circuit to store at least N+1 initial values that are determined by a start value and a unit variation amount; and an parameter calculating circuit, coupled to the storage circuit, to carry out addition calculation for at least [(K?1)×N+1] time(s) if a multiple K is positive or subtraction calculation for at least ?K×N time(s) if the multiple K is negative, so as to generate the aforementioned parameter, wherein the multiple K is derived from a difference divided by the unit variation amount while the difference is a current value minus the start value.

Abstract: The invention provides a substrate structure used for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure includes a substrate having a first surface and a second surface opposite to the first surface and a plurality of grooving structure formed on the first surface of the substrate. The light-emitting diode is formed on the first surface of the substrate.

Abstract: A method of inhibiting the growth of Gram-positive bacteria comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is provided. The Gram-positive bacteria comprise methicillin-resistant Staphylococcus aureus. A method of treating sepsis comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is also provided. A method of treating leukemia comprising administering an effective amount of Tellimagrandin II, its pharmaceutically acceptable salt, enantiomer, isomer or tautomer to a subject is further provided.