Patents by Inventor Wan-Hsien Lin

Wan-Hsien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cut metal gate refill with void
    Patent number: 11532479
    Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Gang Chen, Wan-Hsien Lin, Chieh-Ping Wang, Tai-Chun Huang, Chi On Chui
  • CUT METAL GATE REFILL WITH VOID
    Publication number: 20220359206
    Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Ting-Gang Chen, Wan-Hsien Lin, Chieh-Ping Wang, Tai-Chun Huang, Chi On Chui
  • CUT METAL GATE REFILL WITH VOID
    Publication number: 20210313181
    Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 7, 2021
    Inventors: Ting-Gang Chen, Wan-Hsien Lin, Chieh-Ping Wang, Tai-Chun Huang, Chi On Chui