Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: A compression state measuring method is adapted to measure a compressed state of a compressed object compressed by a compressing object. First, at least one image of a first surface region of the compressed object not covered by the compressing object is captured. A first strain distribution value of the first surface region is obtained according to the at least one image. At least one strain distribution function is obtained according to the first strain distribution value. A second strain distribution value of a second surface region of the compressed object covered by the compressing object is obtained according to the at least one strain distribution function.