Abstract: The present disclosure provides a semiconductor structure and a method of forming the same. A semiconductor structure according to the present disclosure includes a plurality of nanostructures disposed over a substrate and a gate structure wrapping around each of the plurality of nanostructure. Each of the plurality of nanostructures includes a channel layer sandwiched between two cap layers along a direction perpendicular to the substrate.

Abstract: The present disclosure provides a semiconductor structure and a method of forming the same. A semiconductor structure according to the present disclosure includes a plurality of nanostructures disposed over a substrate, a plurality of inner spacer features interleaving the plurality of nanostructures. The plurality of nanostructures are arranged along a direction perpendicular to the substrate. The plurality of inner spacer features include a bottommost inner spacer feature and upper inner spacer features disposed above the bottommost inner spacer feature. The first height of the bottommost inner spacer feature along the direction is greater than a second height of each of the upper inner spacer features.