Patents by Inventor Wan JIN
Wan JIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11997856Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: May 3, 2021Date of Patent: May 28, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
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Patent number: 11987659Abstract: Provided are a hydrogenation reaction catalyst and a preparation method therefor, and more particularly, to a hydrogenation reaction catalyst including sulfur as a promoter, thereby selectively hydrogenating an olefin by changing a relative hydrogenation rate of the olefin and an aromatic group during a hydrogenation reaction of an unsaturated hydrocarbon compound containing an aromatic group, and a preparation method therefor.Type: GrantFiled: December 20, 2018Date of Patent: May 21, 2024Assignee: HANWHA SOLUTIONS CORPORATIONInventors: Bong Sik Jeon, Wan Jae Myeong, Woo Jin Park, Eui Geun Jung
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Patent number: 11969448Abstract: A probiotic composition for improving an effect of a chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is disclosed in the present disclosure. The probiotic composition comprises an effective amount of Lactobacillus paracasei GMNL-133, an effective amount of Lactobacillus reuteri GMNL-89, and a pharmaceutically acceptable carrier, wherein the Lactobacillus paracasei GMNL-133 was deposited in the China Center for Type Culture Collection on Sep. 26, 2011 under an accession number CCTCC NO. M 2011331, and the Lactobacillus reuteri GMNL-89 was deposited in the China Center for Type Culture Collection on Nov. 19, 2007 under an accession number CCTCC NO. M 207154. A method for improving the effect of the chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is further disclosed in the present disclosure.Type: GrantFiled: May 12, 2021Date of Patent: April 30, 2024Assignee: GENMONT BIOTECH INC.Inventors: Wan-Hua Tsai, I-ling Hsu, Shan-ju Hsu, Wen-ling Yeh, Ming-shiou Jan, Wee-wei Chieng, Li-jin Hsu, Ying-chun Lai
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Patent number: 11967630Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.Type: GrantFiled: February 11, 2022Date of Patent: April 23, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung Hoon Lee, Wan Don Kim, Jong Ho Park, Sang Jin Hyun
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Publication number: 20240120563Abstract: A sensing block includes a block body having a plurality of slots through which electrode leads of battery cells pass, a plurality of sensing terminals installed between the plurality of slots on a front surface of the block body, a circuit board installed on the front surface of the block body, and a connector installed on the circuit board.Type: ApplicationFiled: July 25, 2023Publication date: April 11, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, VALEO KAPEC CO., LTD.Inventors: Hyunchang Kang, Bum Jin Kim, Kyubin Chung, Seoha Kang, Ji Woong Han, Wan Choi, Houk Park, Jae Eun Kim
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Patent number: 11949012Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.Type: GrantFiled: December 8, 2020Date of Patent: April 2, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Ho Park, Wan Don Kim, Weon Hong Kim, Hyeon Jun Baek, Byoung Hoon Lee, Jeong Hyuk Yim, Sang Jin Hyun
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Publication number: 20240097425Abstract: A lightning rod with an electric double layer and electric dipole moment type discharge amplification function, the lightning rod including: a support member (100) for moving a lightning current to the ground; an emission member (200) fitted to the support member (100) to collect charges of the ground according to the approach of a thundercloud and thus emit a large number of ions with the opposite polarity to the polarity of the thundercloud; ground charge chargers (300) fitted to the support member (100) and having spaces formed therein to charge the charges of the ground; an insulation member (400) disposed on top of the emission member (200); and discharge induction members (500) fixedly disposed on top and underside of the emission member (200) by means of the insulation member (400).Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Dong-Jin KIM, Wan-Sung KWON, Sang-Won SEO, Yeong-Sin PARK, Sung-Joon LEE, Jae-Sang YOO
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Patent number: 11932097Abstract: A battery unit for a vehicle is provided. The battery unit includes a lower case having two battery compartments arranged in a direction toward opposite sides of the vehicle, respectively, and a connecting portion bent to be convex upwardly between the two battery compartments. A reinforcing structure is disposed on the connecting portion. Two battery modules are installed in the two battery compartments, respectively and a power wire is electrically connected to at least one of the two battery modules and extends from one of the two battery compartments to the other one of the two battery compartments through the connecting portion.Type: GrantFiled: August 31, 2021Date of Patent: March 19, 2024Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Sang Wan Kim, Kyung Ho Kim, Hyeon Su Jin
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Patent number: 11925920Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.Type: GrantFiled: October 16, 2018Date of Patent: March 12, 2024Assignee: HANWHA CHEMICAL CORPORATIONInventors: Eung Gyu Kim, Won Yong Kim, Jeong Hwan Chun, Young Jin Cho, Joung Woo Han, Hyo Suk Kim, Wan Jae Myeong, Ki Taeg Jung
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Patent number: 11929384Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: March 20, 2023Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Patent number: 11858911Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.Type: GrantFiled: February 17, 2022Date of Patent: January 2, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo
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Publication number: 20230391861Abstract: Provided is a conformation-specific antigen binding domain (ABD) specific for the Hedgehog receptor Patched1, which may be provided in the form of a nanobody. This nanobody potently activates the Hedgehog pathway in vitro and in vivo by stabilizing an alternative conformation of a Patched1 “switch helix”. This ABD or nanobody is water soluble, i.e. does not require lipid modifications for its activity, facilitating mechanistic studies of Hedgehog pathway activation and therapeutic use.Type: ApplicationFiled: September 27, 2021Publication date: December 7, 2023Inventors: Philip A. Beachy, Yunxiao Zhang, Aashish Manglik, Wan-Jin Lu, Shuo Han
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Patent number: 11839096Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.Type: GrantFiled: November 25, 2019Date of Patent: December 5, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Young Yun, Sung Jun Park, Chul Joon Heo, Kyung Bae Park, Gae Hwang Lee, Yong Wan Jin
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Patent number: 11793072Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: GrantFiled: January 5, 2023Date of Patent: October 17, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jisoo Shin, Yeong Suk Choi, Katsunori Shibata, Taejin Choi, Sungyoung Yun, Ohkyu Kwon, Sangmo Kim, Hiromasa Shibuya, Gae Hwang Lee, Yong Wan Jin, Hyesung Choi, Chul Baik, Hyerim Hong
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Patent number: 11785789Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.Type: GrantFiled: August 3, 2021Date of Patent: October 10, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Gae Hwang Lee, Kwang Hee Lee, Sung Young Yun, Dong-Seok Leem, Yong Wan Jin
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Publication number: 20230320086Abstract: A semiconductor memory device includes: a first gate stack structure including first interlayer insulating layers and first conductive layers, which are alternately stacked in a vertical direction; a dummy vertical channel penetrating the first gate stack structure; lower vertical channels penetrating the first gate stack structure at both sides of the dummy vertical channel; a second gate stack structure including second interlayer insulating layers and second conductive layers, which are alternately stacked in the vertical direction on the first gate stack structure; a first select line isolation structure partially penetrating the second gate stack structure; upper vertical channels connected to the lower vertical channels while penetrating the second gate stack structure; and a second select line isolation structure overlapping with the dummy vertical channel in the vertical direction, the second select line isolation structure penetrating a portion of the second gate stack structure.Type: ApplicationFiled: October 3, 2022Publication date: October 5, 2023Applicant: SK hynix Inc.Inventors: Kun Young LEE, Sang Soo KIM, Sang Wan JIN
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Publication number: 20230301096Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of conductive patterns and a plurality of interlayer insulating layers, which are alternately stacked on a substrate; a plurality of channel structures extending in a first direction substantially perpendicular to the substrate to penetrate the stack structure; at least one first slit extending in a second direction substantially horizontal to the substrate while penetrating conductive patterns for select lines among the plurality of conductive patterns; a second slit extending in the second direction while penetrating the conductive patterns for select lines; and a plurality of support structures disposed on a bottom of the second slit, the plurality of support structures penetrating conductive patterns for word lines among the plurality of conductive patterns.Type: ApplicationFiled: September 13, 2022Publication date: September 21, 2023Applicant: SK hynix Inc.Inventors: Kun Young LEE, Sang Soo KIM, Nam Kuk KIM, Sang Wan JIN
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Publication number: 20230299115Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: ApplicationFiled: March 20, 2023Publication date: September 21, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Patent number: 11716892Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.Type: GrantFiled: April 12, 2021Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Yong Wan Jin, Chui Joon Heo
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Patent number: 11713952Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.Type: GrantFiled: May 15, 2020Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Hiromasa Shibuya, Sung Young Yun, Gae Hwang Lee, Yong Wan Jin, Chui Joon Heo