Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A lightning rod with an electric double layer and electric dipole moment type discharge amplification function, the lightning rod including: a support member (100) for moving a lightning current to the ground; an emission member (200) fitted to the support member (100) to collect charges of the ground according to the approach of a thundercloud and thus emit a large number of ions with the opposite polarity to the polarity of the thundercloud; ground charge chargers (300) fitted to the support member (100) and having spaces formed therein to charge the charges of the ground; an insulation member (400) disposed on top of the emission member (200); and discharge induction members (500) fixedly disposed on top and underside of the emission member (200) by means of the insulation member (400).

Abstract: The present invention relates to a method for preparing a carbon nanofiber in which a nano-sized metal oxide or an intermetallic compound is dispersed, and more specifically, provides a preparation method comprising the step of electrospinning a metal precursor/carbon fiber precursor solution and heat treating the same. The carbon nanofiber containing a metal oxide or an intermetallic compound can be used as an anode material for a secondary battery. According to the present invention, a secondary battery using the carbon nanofiber containing a metal oxide or an intermetallic compound as an anode material has excellent capacity, and shows excellent cycle stability, in other words, maintains a capacity of 90% or more of the initial capacity even after 100 cycles, and the like.