Patents by Inventor Wan-Jou Chen

Wan-Jou Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11793289
    Abstract: An artificial nail tip having a plurality of smile line guidelines embedded on the surface of the artificial nail tip, which allows a user or a nail professional to easily create smile lines of varying depths on the artificial nail tip is described.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: October 24, 2023
    Assignee: APPLIED LACQUER INDUSTRIES INC.
    Inventors: Wan Jou Chen, Carol Ma
  • Patent number: 11297923
    Abstract: An applying method of a nail polish on a nail surface via an airbrush applicator, including the steps of: filling a predetermined amount of nail polish in a polish container of the airbrush applicator; actuating an air compressor of the airbrush applicator, which is powered by a rechargeable battery thereof, for generating pressurized air; controlling a flow of the pressurized air to mix with the nail polish so as to form an aerosol on the nail surface; and drying the nail polish on the nail surface to form a nail coating thereon.
    Type: Grant
    Filed: November 18, 2018
    Date of Patent: April 12, 2022
    Inventors: Carol Ma, Wan Jou Chen
  • Patent number: 10930831
    Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: February 23, 2021
    Assignee: High Power Opto, Inc.
    Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen
  • Publication number: 20200154849
    Abstract: An applying method of a nail polish on a nail surface via an airbrush applicator, including the steps of: filling a predetermined amount of nail polish in a polish container of the airbrush applicator; actuating an air compressor of the airbrush applicator, which is powered by a rechargeable battery thereof, for generating pressurized air; controlling a flow of the pressurized air to mix with the nail polish so as to form an aerosol on the nail surface; and drying the nail polish on the nail surface to form a nail coating thereon.
    Type: Application
    Filed: November 18, 2018
    Publication date: May 21, 2020
    Inventors: Carol MA, Wan Jou CHEN
  • Publication number: 20200020837
    Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.
    Type: Application
    Filed: September 20, 2018
    Publication date: January 16, 2020
    Applicant: High Power Opto, Inc.
    Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen
  • Patent number: 10263093
    Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path bet
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: April 16, 2019
    Assignee: HIGH POWER OPTO. INC.
    Inventors: Wei-Yu Yen, Li-Ping Chou, Wan-Jou Chen, Chih-Sung Chang
  • Patent number: 10243108
    Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: March 26, 2019
    Assignee: High Power Opto. Inc.
    Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen, Chih-Sung Chang
  • Publication number: 20190088823
    Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.
    Type: Application
    Filed: September 18, 2017
    Publication date: March 21, 2019
    Inventors: Li-Ping CHOU, Wan-Jou CHEN, Wei-Yu YEN, Chih-Sung CHANG
  • Publication number: 20190019878
    Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path bet
    Type: Application
    Filed: March 20, 2018
    Publication date: January 17, 2019
    Inventors: Wei-Yu Yen, Li-Ping Chou, Wan-Jou Chen, Chih-Sung Chang