Patents by Inventor Wan-Jou Chen
Wan-Jou Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11793289Abstract: An artificial nail tip having a plurality of smile line guidelines embedded on the surface of the artificial nail tip, which allows a user or a nail professional to easily create smile lines of varying depths on the artificial nail tip is described.Type: GrantFiled: June 25, 2021Date of Patent: October 24, 2023Assignee: APPLIED LACQUER INDUSTRIES INC.Inventors: Wan Jou Chen, Carol Ma
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Patent number: 11297923Abstract: An applying method of a nail polish on a nail surface via an airbrush applicator, including the steps of: filling a predetermined amount of nail polish in a polish container of the airbrush applicator; actuating an air compressor of the airbrush applicator, which is powered by a rechargeable battery thereof, for generating pressurized air; controlling a flow of the pressurized air to mix with the nail polish so as to form an aerosol on the nail surface; and drying the nail polish on the nail surface to form a nail coating thereon.Type: GrantFiled: November 18, 2018Date of Patent: April 12, 2022Inventors: Carol Ma, Wan Jou Chen
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Patent number: 10930831Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.Type: GrantFiled: September 20, 2018Date of Patent: February 23, 2021Assignee: High Power Opto, Inc.Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen
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Publication number: 20200154849Abstract: An applying method of a nail polish on a nail surface via an airbrush applicator, including the steps of: filling a predetermined amount of nail polish in a polish container of the airbrush applicator; actuating an air compressor of the airbrush applicator, which is powered by a rechargeable battery thereof, for generating pressurized air; controlling a flow of the pressurized air to mix with the nail polish so as to form an aerosol on the nail surface; and drying the nail polish on the nail surface to form a nail coating thereon.Type: ApplicationFiled: November 18, 2018Publication date: May 21, 2020Inventors: Carol MA, Wan Jou CHEN
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Publication number: 20200020837Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.Type: ApplicationFiled: September 20, 2018Publication date: January 16, 2020Applicant: High Power Opto, Inc.Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen
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Patent number: 10263093Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path betType: GrantFiled: March 20, 2018Date of Patent: April 16, 2019Assignee: HIGH POWER OPTO. INC.Inventors: Wei-Yu Yen, Li-Ping Chou, Wan-Jou Chen, Chih-Sung Chang
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Patent number: 10243108Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.Type: GrantFiled: September 18, 2017Date of Patent: March 26, 2019Assignee: High Power Opto. Inc.Inventors: Li-Ping Chou, Wan-Jou Chen, Wei-Yu Yen, Chih-Sung Chang
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Publication number: 20190088823Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.Type: ApplicationFiled: September 18, 2017Publication date: March 21, 2019Inventors: Li-Ping CHOU, Wan-Jou CHEN, Wei-Yu YEN, Chih-Sung CHANG
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Publication number: 20190019878Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path betType: ApplicationFiled: March 20, 2018Publication date: January 17, 2019Inventors: Wei-Yu Yen, Li-Ping Chou, Wan-Jou Chen, Chih-Sung Chang