Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a stack structure. The substrate includes a first upper region, a second upper region, a third upper region and a fourth upper region. The stack structure locates on the fourth upper region of the substrate without overlapping the first upper region, the second upper region and the third upper region. The stack structure includes a first end face, a top surface, a first semiconductor layer, an active region, and a second semiconductor layer. The second semiconductor layer includes a ridge structure. The first upper region is closer to the light emitting end face than the second upper region is. The semiconductor device has a first depth between the top surface and the first upper region, and a second depth between the top surface and the second upper region smaller than the first depth.

Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A display device includes: a substrate including a display area and a non-display area surrounding the display area; a light emitting element layer on the display area on the substrate and including a plurality of light emitting elements; and an encapsulating layer on the light emitting element layer and on a portion of the display area and the non-display area; and wherein the substrate comprises an upper surface on which the light emitting element layer is located, a bottom surface opposite to the upper surface, a side surface connected to the upper surface and not parallel to the upper surface, and a first inclined surface connected to the side surface and the bottom surface and not parallel to the side surface and the bottom surface, wherein an edge area of the upper surface of the substrate adjacent to an edge of the substrate, in which a processing trace remains.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A display device and method for manufacturing thereof are provided. The display device includes a substrate having a display area and a non-display area, and including an edge, an upper surface having an edge area in which a processing trace remains adjacent to the edge, a bottom surface opposite to the upper surface, a side surface connected to the upper surface and not parallel thereto, and a first inclined surface connected to the side surface and to the bottom surface, a light-emitting element layer above the upper surface of the substrate in the display area, and including light-emitting elements, an encapsulating layer above the light-emitting element layer and corresponding to a portion of the display area and the non-display area, and a protective layer above an outer surface of the substrate, and located on at least one of the bottom surface, the side surface, or the first inclined surface.

Abstract: A display device includes: a substrate comprising an upper surface, a bottom surface facing the upper surface, and a through hole penetrating the upper surface and the bottom surface; and a light emitting element layer on the upper surface of the substrate, wherein the substrate comprises a side surface that meets the upper surface in the through hole, a first surface that meets the bottom surface, a second surface that meets the side surface, and a third surface between the first surface and the second surface, and wherein the first surface and the second surface are spaced apart from each other with the third surface therebetween, and are inclined surfaces.

Abstract: A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.

Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.