Abstract: An electronic device includes: a body, including opposite outer and inner surfaces, and a through opening passing through the outer and inner surfaces; a fan, disposed on the outer surface and having an air outlet; a heat sink assembly, disposed at the air outlet and corresponding to the through opening; a first thermal tube, having one end assembled on the heat sink assembly and located on the side of the outer surface; a first heat source, disposed corresponding to the other end of the first thermal tube; a thermal plate, disposed in the body and corresponding to the through opening, having one side abutting against the heat sink assembly and the inner surface; a second thermal tube, having one end connected to the other side of the thermal plate; and a second heat source, disposed corresponding to the other end of the second thermal tube.

Abstract: A latching member includes a hard material member and a soft material member. The hard material member includes a hard material body, an elastic arm, and a buckle portion. The hard material body has a first side and a second side opposite to each other. One of two ends of the elastic arm is connected to the first side of the hard material body, and at least one hollow portion is between the elastic arm and the hard material body. The buckle portion is connected to the other end of the elastic arm. The soft material member includes a first soft material body, the first soft material body is on the first side of the hard material body and covers the hollow portion and the elastic arm.

Abstract: A computer with a function expansion mechanism includes a computer host and a function expansion device. The computer host includes a base and a functional base cover covering the base. A bottom surface of the base has a first opening, and the base is provided therein with a connector exposed from the first opening. The function expansion device includes an expansion seat, a top surface of the expansion seat has a second opening, and the expansion seat is provided therein with a docking connector exposed from the second opening. The computer host is stacked and assembled by the bottom surface at the top surface of the function expansion device, such that the first opening and the second opening are in communication with each other and the connector and the docking connector are mutually docked, thereby achieving an effect of function expansion without removal of a computer.

Abstract: The present disclosure provides a conductive paste for preparing flexible porous piezoresistive sensor, a method for making the same, and application thereof. The conductive paste includes a conductive carbon material, a sacrificial template and a high molecular polymer matrix. The high molecular polymer matrix includes a high molecular polymer and an organic solvent, and the mass ratio of the high molecular polymer to the organic solvent is 1:2 to 1:3; and based on the total mass of the conductive carbon material, the sacrificial template and the high molecular polymer, the mass percentage of the conductive carbon material is 2%-5%, the mass percentage of the sacrificial template is 75%-85%, and the mass percentage of the high molecular polymer is 10%-23%. This disclosure uses a sacrificial template with adjustable particle size to prepare conductive paste, greatly increasing number of nanopores or micropores after conductive paste is formed into a film.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, an active region on the substrate, and a gate structure, a source conductor, and a drain conductor disposed on the active region. The semiconductor device further comprises a first type doped region of the active region below the gate structure and a second type doped region of the active region adjacent to the first type doped region, and the first type doped region is different from the second type doped region. The second type doped region is configured to function as a resistor.

Abstract: An electronic device includes a housing and a first heat source, a second heat source, and a heat dissipation module that are disposed in the housing. The heat dissipation module includes a first fan, a second fan, a first heat conduction member, and a second heat conduction member. The first fan and the second fan are disposed on two opposite sides of the housing. One end of the first heat conduction member is disposed at the first fan, and the other end is located at a position on a side of an upper surface of the housing corresponding to the first heat source. One end of the second heat conduction member is disposed at the second fan, and the other end is located on a side of a lower surface of the housing and abuts against the second heat source.

Abstract: The present disclosure relates to non-naturally occurring polypeptides useful for preparing Ezetimibe, polynucleotides encoding the polypeptides, and methods of using the polypeptides.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit generates a clock signal and adjust a clock frequency of the clock signal according to a control voltage generated by the processor circuit. The processor circuit calculates a current frequency aging rate value based on a current clock frequency. The processor circuit calculates a control voltage regulation rate value based on the current frequency aging rate value and a control voltage slope, and compensates the control voltage based on the control voltage regulation rate value in the holdover state. Alternatively, the processor circuit calculates a frequency regulation value based on the current frequency aging rate value and an oscillator resolution of the synchronizer, and provides the frequency regulation value to the synchronizer in the holdover state to compensate an output frequency of the synchronizer.

Abstract: An electronic device including a first shell, a second shell, a circuit board, a heat conductive member and a heat source. The first shell is made of a metal material. The second shell is disposed on a side of the first shell. The circuit board is disposed between the first shell and the second shell, and includes a through hole that passes through both sides. The heat conductive member includes a first contact portion, an extending section and a second contact portion connected in a sequential manner. The first contact portion is located on one side of the circuit board, the second contact portion is located on the other side of the circuit board, the extending section extends through the through hole, and the first contact portion abuts against the first shell. The heat source is connected to the second contact portion.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, an active region on the substrate, and a first transistor having a gate structure, a source conductor, and a drain conductor disposed on the active region, wherein the drain conductor and the source conductor are disposed on opposite sides of the gate structure, and the source conductor is shorter than the drain conductor.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit is configured to generate a clock signal and adjust a clock frequency of the clock signal according to a control voltage. The processor circuit is coupled to the oscillator circuit and is configured to generate the control voltage. The processor circuit reads a frequency aging rate value and a control voltage slope of the oscillator circuit from the oscillator circuit, calculates a control voltage regulation rate value corresponding to the frequency aging rate value and the control voltage slope, and compensates the control voltage based on the control voltage regulation rate value. Alternatively, the processor circuit reads the control voltage regulation rate value from the oscillator circuit, and compensates the control voltage based on the control voltage regulation rate value.

Abstract: The present disclosure relates to non-naturally occurring polypeptides useful for preparing Ezetimibe, polynucleotides encoding the polypeptides, and methods of using the polypeptides.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

Abstract: An electronic device includes a casing and a waterproof lid structure. The casing has an opening. The waterproof lid structure corresponds in position to the opening and includes a supportive sheet metal, waterproof component, movable latch lid and bolts. The supportive sheet metal has an axle pivotally connected to one side of the opening. The waterproof component hermetically seals the opening and lies on one side of the supportive sheet metal. The movable latch lid covers the other side of the supportive sheet metal and is penetrated by passages. The bolts correspond in position to the passages, respectively, and each include a rod portion and a head portion disposed at one end of the rod portion. The rod portions pass through the passages and supportive sheet metal to get fastened to the waterproof component, allowing the head portions to stop at the outer side of the movable latch lid.

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

Abstract: The present invention provides an electronic device including a replaceable module and a sliding fastener. The replaceable module is provided with a first sliding track. The sliding fastener includes a body having a latch extending therefrom the body and a groove so as to form a handle. The body is provided with a second sliding track corresponding to the first sliding track, and the handle is elastically bendable along the groove so as to flex relative to the body and disengage from the replaceable module.

Abstract: The present disclosure provides acyltransferases useful for synthesizing therapeutically important statin compound.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit is configured to generate a clock signal and adjust a clock frequency of the clock signal according to a control voltage. The processor circuit is coupled to the oscillator circuit and is configured to generate the control voltage. The processor circuit reads a frequency aging rate value and a control voltage slope of the oscillator circuit from the oscillator circuit, calculates a control voltage regulation rate value corresponding to the frequency aging rate value and the control voltage slope, and compensates the control voltage based on the control voltage regulation rate value. Alternatively, the processor circuit reads the control voltage regulation rate value from the oscillator circuit, and compensates the control voltage based on the control voltage regulation rate value.

Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.