Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.

Abstract: The disclosure provides a display panel including first pixel structures, second pixel structures, first signal lines, second signal lines, a first driving circuit, and a second driving circuit. The first signal lines and the first pixel structures are disposed in a first display area and electrically connected. The second signal lines and the second pixel structures are disposed in a second display area and electrically connected. The first display area and the second display area are arranged in a first direction. The first signal lines and the second signal lines are arranged in a second direction. The first direction and the second direction are perpendicular. The first signal lines and the second signal lines are structurally separated. The first drive circuit is electrically connected to the first signal lines. The second driving circuit is electrically independent from the first driving circuit and electrically connected to the second signal lines.

Abstract: A pixel circuit includes a driving circuit, a lighting element, and multiple switching circuits. The driving circuit is configured to provide a driving current to a first node. A first terminal of the lighting element is coupled with a second node. A second terminal of the lighting element is configured to receive a system low voltage. The multiple switching circuits are coupled between the first node and the second node in a parallel connection, and configured to correspondingly receive multiple emission control signals and at least one grayscale control signal. During each frame, the multiple emission control signals provide multiple pulses, and the multiple pulses do not mutually overlapping in time sequence, so that the multiple switching circuits selectively couple the first node to the second node according to the multiple pulses and the at least one grayscale control signal.

Abstract: A pixel circuit includes a driving circuit, a lighting element, and multiple switching circuits. The driving circuit is configured to provide a driving current to a first node. A first terminal of the lighting element is coupled with a second node. A second terminal of the lighting element is configured to receive a system low voltage. The multiple switching circuits are coupled between the first node and the second node in a parallel connection, and configured to correspondingly receive multiple emission control signals and at least one grayscale control signal. During each frame, the multiple emission control signals provide multiple pulses, and the multiple pulses do not mutually overlapping in time sequence, so that the multiple switching circuits selectively couple the first node to the second node according to the multiple pulses and the at least one grayscale control signal.

Abstract: A display device including a first substrate, pixel structures, a second substrate, first signal lines, and second signal lines is provided. The pixel structures are disposed on a first surface of the first substrate. Each of the pixel structures includes a switch element and a pixel electrode. The switch element has a first terminal, a second terminal, and a control terminal. The pixel electrode is electrically connected to the second terminal of the switch element. The second substrate is disposed under a second surface of the first substrate. The first signal lines and the second signal lines are disposed on the second substrate. The first terminals and the control terminals of the switch elements of the pixel structures are respectively electrically connected to the first signal lines and the second signal lines, wherein the first signal lines are substantially parallel to the second signal lines.

Abstract: The disclosure provides a display panel including first pixel structures, second pixel structures, first signal lines, second signal lines, a first driving circuit, and a second driving circuit. The first signal lines and the first pixel structures are disposed in a first display area and electrically connected. The second signal lines and the second pixel structures are disposed in a second display area and electrically connected. The first display area and the second display area are arranged in a first direction. The first signal lines and the second signal lines are arranged in a second direction. The first direction and the second direction are perpendicular. The first signal lines and the second signal lines are structurally separated. The first drive circuit is electrically connected to the first signal lines. The second driving circuit is electrically independent from the first driving circuit and electrically connected to the second signal lines.

Abstract: A display device including a first substrate, pixel structures, a second substrate, first signal lines, and second signal lines is provided. The pixel structures are disposed on a first surface of the first substrate. Each of the pixel structures includes a switch element and a pixel electrode. The switch element has a first terminal, a second terminal, and a control terminal. The pixel electrode is electrically connected to the second terminal of the switch element. The second substrate is disposed under a second surface of the first substrate. The first signal lines and the second signal lines are disposed on the second substrate. The first terminals and the control terminals of the switch elements of the pixel structures are respectively electrically connected to the first signal lines and the second signal lines, wherein the first signal lines are substantially parallel to the second signal lines.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A hydrogen-purifying device is suitable for a fuel cell (FC). The hydrogen-purifying device includes a guiding tank, a first water-absorbing material, a porous filter material and a second water-absorbing material. The guiding tank is connected to a hydrogen-generating device and a fuel cell. The hydrogen-generating device generates hydrogen, moisture mixed with the hydrogen and impurities mixed with the hydrogen. The first water-absorbing material, the porous filter material and the second water-absorbing material are disposed in the guiding tank. The hydrogen passes through the first water-absorbing material to remove a part of the moisture. Then, the hydrogen further passes through the porous filter material to remove the impurity. After that, the hydrogen further passes through the second water-absorbing material to remove another part of the moisture and arrives at the fuel cell.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract: A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.