Patents by Inventor Wan-Lin Tsai
Wan-Lin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942467Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.Type: GrantFiled: June 18, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: I-Sheng Chen, Yi-Jing Li, Chia-Ming Hsu, Wan-Lin Tsai, Clement Hsingjen Wann
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Patent number: 11856971Abstract: The invention discloses a method for improving immunity in shrimps, by administering an extract of cocoa rind to a shrimp body to improve immunity of the shrimp body. The extract of cocoa rind is obtained by extracting a dried sample of cocoa rind by an aqueous ethanol solution with a concentration of ethanol being 90-98%. The dried sample of cocoa rind has a water content of 2-5%.Type: GrantFiled: July 10, 2019Date of Patent: January 2, 2024Assignee: NATIONAL PINGTUNG UNIVERSITY OF SCIENCE & TECHNOLOGYInventors: Wen-Teng Cheng, Wan-Lin Tsai, Hsin-Wei Kuo, Yu-Fen Liu, Chin-Chyuan Chang, Yu-Hung Lin
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Publication number: 20230420452Abstract: Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby changing the resistivity of the resistor. Edge gates of the FinFET transistor may be replaced with insulating structures. Multiple ones of the FinFET/embedded resistor combination may be utilized together in a common drain/common source contact design.Type: ApplicationFiled: June 24, 2022Publication date: December 28, 2023Inventors: Kai-Qiang Wen, Shih-Fen Huang, Shih-Chun Fu, Chi-Yuan Shih, Feng Yuan, Wan-Lin Tsai, Chung-Liang Cheng
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Publication number: 20230260829Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Patent number: 11676852Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: GrantFiled: December 11, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Publication number: 20220406768Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.Type: ApplicationFiled: June 18, 2021Publication date: December 22, 2022Inventors: I-SHENG CHEN, YI-JING LI, CHIA-MING HSU, WAN-LIN TSAI, CLEMENT HSINGJEN WANN
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Publication number: 20210134656Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: ApplicationFiled: December 11, 2020Publication date: May 6, 2021Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Patent number: 10867839Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: GrantFiled: June 15, 2018Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Publication number: 20200357634Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Publication number: 20200305467Abstract: The invention discloses a method for improving immunity in shrimps, by administering an extract of cocoa rind to a shrimp body to improve immunity of the shrimp body. The extract of cocoa rind is obtained by extracting a dried sample of cocoa rind by an aqueous ethanol solution with a concentration of ethanol being 90-98%. The dried sample of cocoa rind has a water content of 2-5%.Type: ApplicationFiled: July 10, 2019Publication date: October 1, 2020Inventors: WEN-TENG CHENG, WAN-LIN TSAI, HSIN-WEI KUO, YU-FEN LIU, CHIN-CHYUAN CHANG, YU-HUNG LIN
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Patent number: 10727045Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.Type: GrantFiled: April 30, 2018Date of Patent: July 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Publication number: 20190385902Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: ApplicationFiled: June 15, 2018Publication date: December 19, 2019Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Patent number: 10361112Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.Type: GrantFiled: October 5, 2017Date of Patent: July 23, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Lin Tsai, Shing-Chyang Pan, Sung-En Lin, Tze-Liang Lee, Jung-Hau Shiu, Jen Hung Wang
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Publication number: 20190103272Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.Type: ApplicationFiled: April 30, 2018Publication date: April 4, 2019Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Publication number: 20190006227Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.Type: ApplicationFiled: October 5, 2017Publication date: January 3, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Lin TSAI, Shing-Chyang Pan, Sung-En Lin, Tze-Liang Lee, Jung-Hau Shiu, Jen Hung Wang
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Patent number: 9845473Abstract: The invention discloses a method for improving immunity in shrimps, by administering a double-stranded RNA specific to tyrosine hydroxylase to a shrimp body to improve immunity of the shrimp body, wherein the double-stranded RNA is administered to the shrimp body by injection into the ventral sinus of the cephalothorax of the shrimp body.Type: GrantFiled: December 21, 2016Date of Patent: December 19, 2017Assignee: NATIONAL PINGTUNG UNIVERSITY OF SCIENCE & TECHNOLOInventors: Wen-Teng Cheng, Chin-Chyuan Chang, Wan-Lin Tsai