Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes an isolation structure formed over a semiconductor substrate. A first fin structure and a second fin structure extend from the semiconductor substrate and protrude above the isolation structure. A first gate structure is formed across the first fin structure and a second gate structure is formed across the second fin structure. A gate isolation structure is formed between the first fin structure and the second fin structure and separates the first gate structure from the second gate structure. The gate isolation structure includes a bowl-shaped insulating layer that has a first convex sidewall surface adjacent to the first gate structure and a second convex sidewall surface adjacent to the second gate structure.

Abstract: A semiconductor structure includes a first gate stack across a first semiconductor fin structure, a second gate stack across a second semiconductor fin structure, a dielectric fin structure between the first semiconductor fin structure and the second semiconductor fin structure, and a gate cut isolation structure over the dielectric fin structure and between the first gate stack and the second gate stack. The gate cut isolation structure includes a protection layer and a fill layer over the protection layer, and the protection layer and the fill layer are made of different materials.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: Improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: An illumination system comprises an exciting light source, a phosphor wheel, a first lens, a first reflector, and a light uniforming element. The exciting light source emits an excitation beam. In a first time sequence, the phosphor wheel reflects the excitation beam to the first reflector, the first reflector reflects the excitation beam to the first lens and the excitation beam passes through the first lens and transmits to the light uniforming element. In a second time sequence, the phosphor wheel converts the excitation beam to a conversion beam, the conversion beam from the phosphor wheel passes through the first lens and transmits to the first reflector, the first reflector reflects the conversion beam to the first lens, the conversion beam passes through the first lens and transmits to the light uniforming element, the excitation beam and the conversion beam, sequentially and respectively transmits to the light uniforming element.

Abstract: Improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: An illumination system, including a light source module, a phosphor wheel, a light recycling element, and a light uniformizing element, is provided. The light source module emits an excitation light beam. The phosphor wheel includes a phosphor region. At a second timing, the other part of the excitation light beam transmitted to the phosphor region forms an unconverted light beam and is transmitted to the light recycling element, and is reflected by the light recycling element to form a recycled light beam. A part of the recycled light beam is converted into a second converted light beam. A first converted light beam and the second converted light beam are transmitted to the light uniformizing element through a same path, so that the illumination system outputs second light in the illumination light beam. A projection apparatus is also provided.

Abstract: An illumination system and a projection apparatus are provided. The illumination system includes an excitation light source, a light guiding element, a filter module, an optical wavelength conversion module, and a homogenizing element. The light guiding element reflects an excitation beam coming from the excitation light source. The filter module includes a filtering region and receives the excitation beam reflected by the light guiding element. The optical wavelength conversion module includes a wavelength conversion region, receives the excitation beam reflected by the filtering region and reflects a conversion beam converted from the excitation beam. The conversion beam forms at least one color beam after passing through the filtering region of the filter module. The homogenizing element receives the excitation beam coming from the filter module and the at least one color beam. An incident angle of the excitation beam on the light guiding element is ?1, and ?1>0°.

Abstract: A projection apparatus and an illumination system that includes an excitation light source, a beam filter module, a wavelength conversion module and a homogenizing element are provided. The beam filter module includes a light effective region and is disposed on a transmission path of an excitation beam. The wavelength conversion module includes a wavelength conversion region and is disposed on a transmission path of the excitation beam reflected by the light effective region. The wavelength conversion region converts the excitation beam into a conversion beam. The conversion beam from the wavelength conversion module passes through the light effective region and then forms at least one color light. An optical axis of the excitation beam incident on the light effective region and a normal line of the light effective region are respectively not parallel to a central axis of the homogenizing element.