Abstract: The disclosure provides a method for manufacturing a separator, comprising the steps of: providing a nonporous precursor substrate; coating a heat-resistant slurry on a surface of the nonporous precursor substrate to form a heat-resistant coating layer, wherein the heat-resistant slurry comprises a binder and a plurality of inorganic particles; and stretching the nonporous precursor substrate with the heat-resistant coating layer formed thereon to generate a separator comprising a porous substrate and a heat-resistant layer; wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.

Abstract: The disclosure provides a separator comprising a porous substrate and a heat-resistant layer disposed on a surface of the substrate. The heat-resistant layer comprises a binder and a plurality of inorganic particles, wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.

Abstract: The disclosure provides a method for manufacturing a separator, comprising the steps of: providing a nonporous precursor substrate; coating a heat-resistant slurry on a surface of the nonporous precursor substrate to form a heat-resistant coating layer, wherein the heat-resistant slurry comprises a binder and a plurality of inorganic particles; and stretching the nonporous precursor substrate with the heat-resistant coating layer formed thereon to generate a separator comprising a porous substrate and a heat-resistant layer; wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.

Abstract: The disclosure provides a separator comprising a porous substrate and a heat-resistant layer disposed on a surface of the substrate. The heat-resistant layer comprises a binder and a plurality of inorganic particles, wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.

Abstract: The energy content of supercapacitor is determined by its capacitance value and working voltage. To attain a high capacitance and a high voltage, several pieces of electrodes and separators are spirally wound with edge sealing to form a bipolar supercapacitor in cylindrical, oval or square configuration. While the winding operation effectively provides a large surface area for high capacitance, the bipolar packaging instantly imparts a unitary roll a minimum working voltage of 5V on using an organic electrolyte. The bipolar roll is a powerful building block for facilitating the assembly of supercapacitor modules. Using containers with multiple compartments, as many bipolar rolls can be connected in series, in parallel or in a combination of the two connections to fabricate integrated supercapacitors with high energy density as required by applications.

Abstract: A concise electronic timer is composed of an adjustable resistor, a supercapacitor and an electromagnetic relay. After a main power is turned off, electricity supplied from the capacitor to the relay will extend or actuate the operation of a load until the discharge of the capacitor is over. Incorporating the resistor with the other two elements, the discharge time of the capacitor can be altered linearly by the resistor, therefore, a linear arrangement of delay extension and time of activation is attained. The simple, compact and economical timer can be used for indoor and outdoor illumination, monitoring security systems, as well as actuating systems.

Abstract: A method of manufacturing a cylindrical high voltage supercapacitor. An anode and a cathode are provided. At least one bipolar electrode is interposed between the anode and the cathode, and a separator is intervened in each pair of the above electrodes. The anode, the cathode, the bipolar electrode and the separator, as placed in the above order, are wound concentrically into a roll, so as to form the cylindrical high voltage supercapacitor.

Abstract: A concise electronic timer is composed of an adjustable resistor, a supercapacitor and an electromagnetic relay. After a main power is turned off, electricity supplied from the capacitor to the relay will extend or actuate the operation of a load until the discharge of the capacitor is over. Incorporating the resistor with the other two elements, the discharge time of the capacitor can be altered linearly by the resistor, therefore, a linear arrangement of delay extension and time of activation is attained. The simple, compact and economical timer can be used for indoor and outdoor illumination, monitoring security systems, as well as actuating systems.

Abstract: A method of manufacturing a cylindrical high voltage supercapacitor. An anode and a cathode are provided. At least one bipolar electrode is interposed between the anode and the cathode, and a separator is intervened in each pair of the above electrodes. The anode, the cathode, the bipolar electrode and the separator, as placed in the above order, are wound concentrically into a roll, so as to form the cylindrical high voltage supercapacitor.

Abstract: A free-standing flow-through capacitor (FTC) is constructed by concentrically winding two electrodes and two dividers into a hollow-center roll. A liquid-feeding pipe is inserted to the central opening for delivering fluids to the FTC. Nanoparticles of hydrated iron compound with Fe3O4 as the main component or its composite powders are used as the active materials for the electrodes. With channels crated by the dividers assembled in the roll, fluids injected from the feed pipe are confined inside the FTC, and flow outwardly and transversely through the entire length of the electrodes. Under an application of a low DC voltage to the electrodes, charged species are adsorbed and removed from the treated liquids as soon as they are in contact with the electrodes. Capacitive deionization using FTC of the present invention is applicable to waste-streams reduction, water purification and desalination at low costs and easy operation.