Patents by Inventor Wan-Ting Lo
Wan-Ting Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250055130Abstract: A low thermal shrinkage separator and a method for manufacturing thereof are disclosed. The method comprises providing a porous polyolefin substrate with a plurality of porous structures on the surfaces and interiors thereof, and applying a precursor solution comprising a titanium alkoxide and a photo-reactive agent, and subsequently irradiating by a UV light to form a low thermal shrinkage thin layer on the surface of the porous polyolefin substrate and the interior sidewalls of the porous structures of the porous polyolefin substrate. The present method can enhance the low thermal shrinkage and electrolyte wettability of the separator.Type: ApplicationFiled: October 4, 2023Publication date: February 13, 2025Applicant: BenQ Materials CorporationInventors: Wan-Ting Lo, Yi-Ting Lo, Meng-Chia Cheng, Tzung Yu Tsai
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Publication number: 20250055135Abstract: A separator and a method for manufacturing thereof are disclosed. The separator comprises an enhanced porous polyolefin substrate and an inorganic layer, wherein the enhanced porous polyolefin substrate is obtained by pre-strengthening a porous polyolefin substrate, and the inorganic layer comprises a plurality of inorganic particles and a binder and coated on at least one surface of the enhanced porous polyolefin substrate, and the pre-strengthening treatment comprises sequentially applying a titanium alkoxide solution and an alcohol solution. The separator of the present invention has improved tensile strength and good compression resistance.Type: ApplicationFiled: October 4, 2023Publication date: February 13, 2025Applicant: BenQ Materials CorporationInventors: Wan-Ting Lo, Yi-Ting Lo, Meng-Chia Cheng
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Publication number: 20250055142Abstract: A high tensile strength separator is disclosed. The separator comprises a porous polyolefin substrate with porous structures on the surface and interior thereof, a strengthening layer formed on at least one surface and the sidewalls of the porous structures of the porous polyolefin substrate, and an inorganic layer comprising a plurality of inorganic particles and a binder and formed on the strengthening layer. The present high tensile strength separator has improved mechanical strength.Type: ApplicationFiled: October 15, 2023Publication date: February 13, 2025Applicant: BenQ Materials CorporationInventors: WAN-TING LO, YI-TING LO, MENG-CHIA CHENG
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Publication number: 20250055127Abstract: A low thermal shrinkage separator and a method for manufacturing thereof is disclosed. The method comprises providing a porous polyolefin substrate with a plurality of porous structures on surfaces and interiors thereof, and applying a prescursor solution comprising a titanium alkoxide and hexamethyldisilazane and subsequently applying an alcohol solution to form a low thermal shrinkage thin film formed on the surfaces and the sidewalls of the porous structures of the porous polyolefin substrate. The present method can enhance the low thermal shrinkage and electrolyte wettability of the separator.Type: ApplicationFiled: October 4, 2023Publication date: February 13, 2025Applicant: BenQ Materials CorporationInventors: Wan-Ting Lo, Yi-Ting Lo, Meng-Chia Cheng
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Publication number: 20250055136Abstract: A separator is disclosed. The separator comprises a porous polyolefin substrate with a plurality of porous structures on the surfaces and interior thereof, and an anti-thermal shrinkage thin layer formed on the surfaces and the sidewalls of the porous structures of the porous polyolefin substrate. The present separator can provide enhanced high temperature shrinkage resistance and electrolyte wettability.Type: ApplicationFiled: October 15, 2023Publication date: February 13, 2025Applicant: BenQ Materials CorporationInventors: WAN-TING LO, YI-TING LO, MENG-CHIA CHENG, TZUNG YU TSAI
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Publication number: 20240234946Abstract: A high thermal-stability separator and method for manufacturing thereof are disclosed. The high thermal-stability separator comprises a porous film and a titanium oxide or/and titanium hydroxide film, wherein the porous film comprises a porous substrate and a inorganic layer, wherein the inorganic layer comprises a plurality of inorganic particles and a binder, the inorganic layer is formed on at least one surface of the porous substrate, and the porous substrate and the inorganic layer have a plurality of interconnected porous structures; and the titanium oxide or/and titanium hydroxide film is formed on the surface and the inner walls of porous structures of the porous film. The present high thermal-stability separator can provide enhanced compression retention and excellent high temperature melt integrity, and maintain a satisfied air permeability (Gurley) after compression.Type: ApplicationFiled: September 28, 2023Publication date: July 11, 2024Applicant: BenQ Materials CorporationInventors: WEI-TING YEH, WAN-TING LO, YI-TING LO, KAI-WEI CHENG, YI-FANG HUANG
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Patent number: 11616273Abstract: The disclosure provides a method for manufacturing a separator, comprising the steps of: providing a nonporous precursor substrate; coating a heat-resistant slurry on a surface of the nonporous precursor substrate to form a heat-resistant coating layer, wherein the heat-resistant slurry comprises a binder and a plurality of inorganic particles; and stretching the nonporous precursor substrate with the heat-resistant coating layer formed thereon to generate a separator comprising a porous substrate and a heat-resistant layer; wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.Type: GrantFiled: March 25, 2022Date of Patent: March 28, 2023Assignee: BenQ Materials CorporationInventors: Wei-Ting Yeh, Yi-Fang Huang, Kai-Wei Cheng, Yu-Ruei Li, Wan-Ting Lo
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Patent number: 11575180Abstract: The disclosure provides a separator comprising a porous substrate and a heat-resistant layer disposed on a surface of the substrate. The heat-resistant layer comprises a binder and a plurality of inorganic particles, wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.Type: GrantFiled: January 28, 2021Date of Patent: February 7, 2023Assignee: BenQ Materials CorporationInventors: Wei-Ting Yeh, Yi-Fang Huang, Kai-Wei Cheng, Yu-Ruei Li, Wan-Ting Lo
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Publication number: 20220216571Abstract: The disclosure provides a method for manufacturing a separator, comprising the steps of: providing a nonporous precursor substrate; coating a heat-resistant slurry on a surface of the nonporous precursor substrate to form a heat-resistant coating layer, wherein the heat-resistant slurry comprises a binder and a plurality of inorganic particles; and stretching the nonporous precursor substrate with the heat-resistant coating layer formed thereon to generate a separator comprising a porous substrate and a heat-resistant layer; wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.Type: ApplicationFiled: March 25, 2022Publication date: July 7, 2022Applicant: BenQ Materials CorporationInventors: WEI-TING YEH, YI-FANG HUANG, KAI-WEI CHENG, YU-RUEI LI, WAN-TING LO
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Publication number: 20210296734Abstract: The disclosure provides a separator comprising a porous substrate and a heat-resistant layer disposed on a surface of the substrate. The heat-resistant layer comprises a binder and a plurality of inorganic particles, wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.Type: ApplicationFiled: January 28, 2021Publication date: September 23, 2021Inventors: WEI-TING YEH, YI-FANG HUANG, KAI-WEI CHENG, YU-RUEI LI, WAN-TING LO
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Patent number: 10922464Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.Type: GrantFiled: December 10, 2019Date of Patent: February 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hui-I Wu, Ke-Ying Su, Wan-Ting Lo, Niranjan Vepuri, Hsiang-Ho Chang
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Publication number: 20200110913Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.Type: ApplicationFiled: December 10, 2019Publication date: April 9, 2020Inventors: Hui-I Wu, Ke-Ying Su, Wan-Ting Lo, Niranjan Vepuri, Hsiang-Ho Chang
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Patent number: 10515172Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.Type: GrantFiled: October 15, 2018Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hui-I Wu, Ke-Ying Su, Wan-Ting Lo, Niranjan Vepuri, Hsiang-Ho Chang
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Publication number: 20190121928Abstract: Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.Type: ApplicationFiled: October 15, 2018Publication date: April 25, 2019Inventors: Hui-I Wu, Ke-Ying Su, Wan-Ting Lo, Niranjan Vepuri, Hsiang-Ho Chang
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Patent number: 6762926Abstract: The energy content of supercapacitor is determined by its capacitance value and working voltage. To attain a high capacitance and a high voltage, several pieces of electrodes and separators are spirally wound with edge sealing to form a bipolar supercapacitor in cylindrical, oval or square configuration. While the winding operation effectively provides a large surface area for high capacitance, the bipolar packaging instantly imparts a unitary roll a minimum working voltage of 5V on using an organic electrolyte. The bipolar roll is a powerful building block for facilitating the assembly of supercapacitor modules. Using containers with multiple compartments, as many bipolar rolls can be connected in series, in parallel or in a combination of the two connections to fabricate integrated supercapacitors with high energy density as required by applications.Type: GrantFiled: May 20, 2003Date of Patent: July 13, 2004Assignee: Luxon Energy Devices CorporationInventors: Lih-Ren Shiue, Chun-Shen Cheng, Jsung-His Chang, Li-Ping Li, Wan-Ting Lo, Kun-Fu Huang
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Patent number: 6680548Abstract: A concise electronic timer is composed of an adjustable resistor, a supercapacitor and an electromagnetic relay. After a main power is turned off, electricity supplied from the capacitor to the relay will extend or actuate the operation of a load until the discharge of the capacitor is over. Incorporating the resistor with the other two elements, the discharge time of the capacitor can be altered linearly by the resistor, therefore, a linear arrangement of delay extension and time of activation is attained. The simple, compact and economical timer can be used for indoor and outdoor illumination, monitoring security systems, as well as actuating systems.Type: GrantFiled: November 20, 2001Date of Patent: January 20, 2004Assignee: Luxon Energy Devices CorporationInventors: Lin-Ren Shiue, Dien-Shi Wu, Ching-Wen Chao, Li-Ping Li, Ming-Fang Hsieh, Hsing-Chen Chung, Wan-Ting Lo
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Patent number: 6579327Abstract: A method of manufacturing a cylindrical high voltage supercapacitor. An anode and a cathode are provided. At least one bipolar electrode is interposed between the anode and the cathode, and a separator is intervened in each pair of the above electrodes. The anode, the cathode, the bipolar electrode and the separator, as placed in the above order, are wound concentrically into a roll, so as to form the cylindrical high voltage supercapacitor.Type: GrantFiled: September 6, 2002Date of Patent: June 17, 2003Assignee: Luxon Energy Devices CorporationInventors: Lih-Ren Shiue, Li-Ping Li, Hsing-Chen Chung, Wan-Ting Lo
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Publication number: 20030094858Abstract: A concise electronic timer is composed of an adjustable resistor, a supercapacitor and an electromagnetic relay. After a main power is turned off, electricity supplied from the capacitor to the relay will extend or actuate the operation of a load until the discharge of the capacitor is over. Incorporating the resistor with the other two elements, the discharge time of the capacitor can be altered linearly by the resistor, therefore, a linear arrangement of delay extension and time of activation is attained. The simple, compact and economical timer can be used for indoor and outdoor illumination, monitoring security systems, as well as actuating systems.Type: ApplicationFiled: November 20, 2001Publication date: May 22, 2003Inventors: LIH-REN Shiue, Dien-Shi Wu, Ching-Wen Chao, Li-Ping Li, Ming-Fang Hsieh, Hsing-Chen Chung, Wan-Ting Lo
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Patent number: 6510043Abstract: A method of manufacturing a cylindrical high voltage supercapacitor. An anode and a cathode are provided. At least one bipolar electrode is interposed between the anode and the cathode, and a separator is intervened in each pair of the above electrodes. The anode, the cathode, the bipolar electrode and the separator, as placed in the above order, are wound concentrically into a roll, so as to form the cylindrical high voltage supercapacitor.Type: GrantFiled: February 7, 2002Date of Patent: January 21, 2003Assignee: Luxon Energy Devices CorporationInventors: Lin-Ren Shiue, Dien-Shi Wu, Ching-Wen Chao, Li-Ping Li, Ming-Fang Hsieh, Hsing-Chen Chung, Wan-Ting Lo
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Patent number: 6462935Abstract: A free-standing flow-through capacitor (FTC) is constructed by concentrically winding two electrodes and two dividers into a hollow-center roll. A liquid-feeding pipe is inserted to the central opening for delivering fluids to the FTC. Nanoparticles of hydrated iron compound with Fe3O4 as the main component or its composite powders are used as the active materials for the electrodes. With channels crated by the dividers assembled in the roll, fluids injected from the feed pipe are confined inside the FTC, and flow outwardly and transversely through the entire length of the electrodes. Under an application of a low DC voltage to the electrodes, charged species are adsorbed and removed from the treated liquids as soon as they are in contact with the electrodes. Capacitive deionization using FTC of the present invention is applicable to waste-streams reduction, water purification and desalination at low costs and easy operation.Type: GrantFiled: September 7, 2001Date of Patent: October 8, 2002Assignee: Lih-Ren ShiueInventors: Lih-Ren Shiue, Chia-Chann Shiue, S-Yen Wang, Fei-Chen Hsieh, Chin-Hui Lee, Wan-Ting Lo, Yu-His Hsieh