Abstract: Provided is an anesthetic composition for locally administering a local anesthetic agent to a subject in need thereof. The anesthetic composition has a lipid based complex prepared by hydrating a lipid cake containing a local anesthetic agent and a lipid mixture with an aqueous buffer solution at a pH higher than 5.5. Also provided is a method to prepare an anesthetic composition using a simpler and more robust for large-scale manufacture and for providing a high molar ratio of local anesthetic agent to phospholipid content as compared to the prior art. This anesthetic composition has a prolonged duration of efficacy adapted to drug delivery.

Abstract: A trench-gate transistor device includes a substrate and a transistor structure. The transistor structure includes a plurality of superjunctions arranged in a first direction, a rectifying area that has at least one Schottky-based diode, and at least one active unit that is located at a side of said rectifying area in a second direction that intersects with the first direction.

Abstract: A high-voltage semiconductor device has a main high-voltage switch device and a current-sense device for mirroring the current through the main high-voltage switch device. The main high-voltage switch device has a plurality of switch cells arranged to form a first array on a semiconductor substrate. Each switch cell has a first cell width. The current-sense device has a plurality of sense cells arranged to form a second array on the semiconductor substrate. Each sense cell has a second cell width larger than the first cell width. The switch cells and the sense cells share a common gate electrode and a common drain electrode.

Abstract: A power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a first metal layer, a substrate, an epitaxy layer, a plurality of first trench wells, a plurality of second trench wells, a plurality of body structure layers, a plurality of polysilicon layers, and a second metal layer. A part of a depletion region is formed between each first trench well and the epitaxy layer and between a body structure layer corresponding to the each first trench well and the epitaxy layer, and a rest part of the depletion region is formed between a second trench well corresponding to the each first trench well and the epitaxy layer. The plurality of second trench wells increase a breakdown voltage of the power MOSFET device and reduce a conduction resistor of the power MOSFET device.

Abstract: A high-voltage semiconductor device has a main high-voltage switch device and a current-sense device for mirroring the current through the main high-voltage switch device. The main high-voltage switch device has a plurality of switch cells arranged to form a first array on a semiconductor substrate. Each switch cell has a first cell width. The current-sense device has a plurality of sense cells arranged to form a second array on the semiconductor substrate. Each sense cell has a second cell width larger than the first cell width. The switch cells and the sense cells share a common gate electrode and a common drain electrode.

Abstract: A power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a first metal layer, a substrate, an epitaxy layer, a plurality of first trench wells, a plurality of second trench wells, a plurality of body structure layers, a plurality of polysilicon layers, and a second metal layer. A part of a depletion region is formed between each first trench well and the epitaxy layer and between a body structure layer corresponding to the each first trench well and the epitaxy layer, and a rest part of the depletion region is formed between a second trench well corresponding to the each first trench well and the epitaxy layer. The plurality of second trench wells increase a breakdown voltage of the power MOSFET device and reduce a conduction resistor of the power MOSFET device.