Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method for forming nanoscale microstructures by solvent etching comprises steps of preparing nanospheres and placing the nanospheres onto a surface of a liquid and allowing the nanospheres to be regularly arranged to form a template. The template is transferred to the photocurable adhesive of the substrate to form a photocured adhesive layer. After photocuring the photocurable adhesive to form a photocured adhesive layer, the substrate is removed and the template and the photocured adhesive layer are placed into a solvent with insignificant polarity to perform etching by dissolving the template with the solvent to form the nanoscale microstructure on the photocured adhesive layer. The method does not require large-scale machines, expensive equipments, and long processing time of molecular self-assembly. In addition to the above advantages, this method is not limited by size of substrates.