Patents by Inventor Wan-Yi Chang

Wan-Yi Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240142664
    Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.
    Type: Application
    Filed: February 12, 2023
    Publication date: May 2, 2024
    Inventors: Han-Yi CHANG, Chun-Han CHEN, Tsung-Kao HSU, Wei-che WANG, Yu-Hung LIN, Wan-Ying GAO, Li-Hao LIU
  • Patent number: 11942329
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a semiconductor protruding structure over a substrate and surrounding the semiconductor protruding structure with an insulating layer. The method also includes forming a dielectric layer over the insulating layer. The method further includes partially removing the dielectric layer and insulating layer using a planarization process. As a result, topmost surfaces of the semiconductor protruding structure, the insulating layer, and the dielectric layer are substantially level with each other. In addition, the method includes forming a protective layer to cover the topmost surfaces of the dielectric layer. The method includes recessing the insulating layer after the protective layer is formed such that the semiconductor protruding structure and a portion of the dielectric layer protrude from a top surface of a remaining portion of the insulating layer.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yi Kao, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Patent number: 11916132
    Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wan-Yi Kao, Hung Cheng Lin, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Publication number: 20220020721
    Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.
    Type: Application
    Filed: September 29, 2021
    Publication date: January 20, 2022
    Inventors: Hsingya Arthur WANG, Sheng-Yuan CHOU, Yu-Ting WANG, Wan-Yi CHANG
  • Publication number: 20210296281
    Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 23, 2021
    Inventors: Hsingya Arthur WANG, Sheng-Yuan CHOU, Yu-Ting WANG, Wan-Yi CHANG
  • Publication number: 20150240034
    Abstract: A method for forming nanoscale microstructures by solvent etching comprises steps of preparing nanospheres and placing the nanospheres onto a surface of a liquid and allowing the nanospheres to be regularly arranged to form a template. The template is transferred to the photocurable adhesive of the substrate to form a photocured adhesive layer. After photocuring the photocurable adhesive to form a photocured adhesive layer, the substrate is removed and the template and the photocured adhesive layer are placed into a solvent with insignificant polarity to perform etching by dissolving the template with the solvent to form the nanoscale microstructure on the photocured adhesive layer. The method does not require large-scale machines, expensive equipments, and long processing time of molecular self-assembly. In addition to the above advantages, this method is not limited by size of substrates.
    Type: Application
    Filed: May 13, 2014
    Publication date: August 27, 2015
    Applicant: National University of Kaohsiung
    Inventors: Yi-Chang Chung, Wan-Yi Chang
  • Patent number: D783695
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: April 11, 2017
    Assignee: Hiwin Technologies Corp.
    Inventors: Cheng-Tang Ke, Kun-Jia Hsu, Dong-Gu Lai, Ren-Jeng Wang, Wan-Yi Chang, Chi-Hong Lin
  • Patent number: D790618
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: June 27, 2017
    Assignee: Hiwin Technologies Corp.
    Inventors: Cheng-Tang Ke, Kun-Jia Hsu, Dong-Gu Lai, Ren-Jeng Wang, Wan-Yi Chang, Chi-Hong Lin
  • Patent number: D805568
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: December 19, 2017
    Assignee: Hiwin Technologies Corp.
    Inventors: Cheng-Tang Ke, Kun-Jia Hsu, Dong-Gu Lai, Ren-Jeng Wang, Wan-Yi Chang, Chi-Hong Lin